Copper precipitates in silicon: Precipitation, dissolution and chemical state
The precipitation and dissolution of copper impurities at oxygen precipitates and stacking faults in silicon were studied using thermal budgets commensurate with standard integrated circuit processing. Additionally, in order to develop a better understanding of the dissolution process, we have obtained results on the chemical state of the copper precipitates. The goal of this work was to determine the feasibility of removing and maintaining copper impurities away from the active device region of an integrated circuit device by use of oxygen precipitates and stacking faults in the bulk of the material. Based on our results, we provide a basis for a predictive understanding of copper precipitation and dissolution in silicon and we discuss the feasibility of copper impurity control in silicon integrated circuit devices.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic Energy Studies (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 795988
- Report Number(s):
- LBNL-49952; JAPIAU; R&D Project: A580SS; TRN: US200212%%259
- Journal Information:
- Journal of Applied Physics, Vol. 91, Issue 10 PT1; Other Information: Journal Publication Date: May 15, 2002; PBD: 1 Feb 2002; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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