Domain structures and temperature-dependent spin reorientation transition in c-axis oriented Co-Cr thin films
Highly c-axis oriented Co95Cr5 films with perpendicular anisotropy were grown epitaxially on Si (111), using an Ag seed layer, by physical vapor deposition. Films were characterized by x-ray diffraction, transmission electron microscopy (TEM), selected area electron diffraction (SAD), and Lorentz microscopy in a TEM. The following epitaxial relationship was confirmed: (111)Si || (111)Ag || (0001)CoCr ; [-220]Si || [-220]Ag || [-1100]CoCr. Magnetic domain structures of these films were observed as a function of thickness, t, in the range, 200 Angstrom < t < 700 Angstrom using a wedge-shaped sample, and temperature-dependent measurements were carried out by in-situ resistance heating. Thickness was measured locally by electron energy loss spectroscopy. At room temperature, below a critical thickness, tc = aprox. 300 Angstrom, the magnetization was found to be effectively in-plane of the film, and above tc a regular, stripe-like domain pattern with a significant, alternating in sign perpendicular component was observed. The spin reorientation transitions of the stripe domains to the in-plane magnetization were studied dynamically by observing the domains as a function of temperature by in-situ heating up to 350 degrees C. The critical transition thickness, tc, which is a function of Ku and magnetostatic energy, was found to increase with increasing temperature. The stripe-domain period, L observed at room temperature was found to increased gradually with thickness; L=90nm at t=300 Angstrom, and L=110nm at t=700 Angstrom.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic Energy Studies. Materials Science and Engineering Division (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 795325
- Report Number(s):
- LBNL-46725; JAPIAU; R&D Project: 501605; TRN: US200212%%54
- Journal Information:
- Journal of Applied Physics, Vol. 87, Issue 9 PT3; Other Information: Journal Publication Date: 05/01/2000; PBD: 23 Apr 2002; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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