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Title: Dislocation processes and deformation twinning in nanocrystalline Al.

Conference ·
OSTI ID:793905

Using a recently developed, massively parallel molecular-dynamics (MD) code for the simulation of polycrystal plasticity, we analyze for the case of nanocrystalline Al the complex interplay among various dislocation and grain-boundary processes during low-temperature deformation. A unique aspect of this work, arising from our ability to deform to rather large plastic strains and to consider a rather large grain size, is the observation of deformation under very high grain-boundary and dislocation densities, i.e., in a deformation regime where they compete on an equal footing. We are thus able to identify the intra- and intergranular dislocation and grain-boundary processes responsible for the extensive deformation twinning observed in our simulations. This illustrates the ability of this type of simulations to capture novel atomic-level insights into the underlying deformation mechanisms not presently possible experimentally. smaller grain size, mobile dislocations must be nucleated from other sources, such as the GBs or grain junctions.

Research Organization:
Argonne National Lab., IL (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
W-31-109-ENG-38
OSTI ID:
793905
Report Number(s):
ANL/MSD/CP-106308; TRN: US200208%%135
Resource Relation:
Conference: ICCN 2002, San Juan (PR), 04/22/2002--04/25/2002; Other Information: PBD: 29 Jan 2002
Country of Publication:
United States
Language:
English