Single ion implantation for solid state quantum computer development

Schenkel, Thomas; Meijers, Jan; Persaud, Arun; McDonald, Joseph W; Holder, Joseph P; Schneider, Dieter H

Title: Single ion implantation for solid state quantum computer development

Full Record
Other Related Research

Abstract

Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), single ion implantation scheme for {sup 31}P{sup q+} ions. When {sup 31}P{sup q+} ions impinge on a wafer surface, their potential energy (9.3 keV for P{sup 15+}) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.

Authors:: Schenkel, Thomas; Meijers, Jan; Persaud, Arun; McDonald, Joseph W; Holder, Joseph P; Schneider, Dieter H

Publication Date:: Tue Dec 18 00:00:00 EST 2001

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Director, Office of Science (US)

OSTI Identifier:: 791787

Report Number(s):: LBNL-48335
R&D Project: Z20042; TRN: US0200685

DOE Contract Number:: AC03-76SF00098

Resource Type:: Conference

Resource Relation:: Conference: SPIE's International Symposium on Integrated Optoelectronic Devices (OE24), San Jose, CA (US), 01/21/2002--01/25/2002; Other Information: PBD: 18 Dec 2001

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ATOMS; COMPUTERS; EFFICIENCY; FABRICATION; ION IMPLANTATION; PHOSPHORUS 31; PHOSPHORUS IONS; ELECTRON EMISSION

Citation Formats


                    Schenkel, Thomas, Meijers, Jan, Persaud, Arun, McDonald, Joseph W, Holder, Joseph P, and Schneider, Dieter H. Single ion implantation for solid state quantum computer development.  United States: N. p., 2001. 
        Web.

Copy to clipboard


                    Schenkel, Thomas, Meijers, Jan, Persaud, Arun, McDonald, Joseph W, Holder, Joseph P, & Schneider, Dieter H. Single ion implantation for solid state quantum computer development.  United States.

Copy to clipboard


                    Schenkel, Thomas, Meijers, Jan, Persaud, Arun, McDonald, Joseph W, Holder, Joseph P, and Schneider, Dieter H. 2001.  
        "Single ion implantation for solid state quantum computer development".  United States.  https://www.osti.gov/servlets/purl/791787.

Copy to clipboard


                    
@article{osti_791787,

  title        = {Single ion implantation for solid state quantum computer development},

  author       = {Schenkel, Thomas and Meijers, Jan and Persaud, Arun and McDonald, Joseph W and Holder, Joseph P and Schneider, Dieter H},

  abstractNote = {Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), single ion implantation scheme for {sup 31}P{sup q+} ions. When {sup 31}P{sup q+} ions impinge on a wafer surface, their potential energy (9.3 keV for P{sup 15+}) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/791787},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Dec 18 00:00:00 EST 2001},

  month        = {Tue Dec 18 00:00:00 EST 2001}

}

Copy to clipboard

Conference:

View Conference (0.37 MB)

Other availability

Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

Single-ion implantation for solid state quantum computer development

Journal Article Schenkel, Thomas; Meijer, J.; Persaud, Arun; ... - Proceedings of SPIE - The International Society for Optical Engineering

Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this paper we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), single ion implantation scheme for ³¹P^q+ ions. When ³¹P^q+ ions impinge on a wafer surface, their potential energy (9.3 keV for P¹⁵⁺) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electronsmore »« less
Cited by 6
https://doi.org/10.1117/12.460808

Full Text Available
Open questions in electronic sputtering of solids by slow highly charged ions with respect to applications in single ion implantation

Conference Schenkel, T; Rangelow, I; Keller, R; ...

In this article we discuss open questions in electronic sputtering of solids by slow, highly charged ions in the context of their application in a single ion implantation scheme. High yields of secondary electrons emitted when highly charged dopant ions impinge on silicon wafers allow for formation of non-Poissonian implant structures such as single atom arrays. Control of high spatial resolution and implant alignment require the use of nanometer scale apertures. We discuss electronic sputtering issues on mask lifetimes, and damage to silicon wafers.
Full Text Available
Integration of Ion Implantation with Scanning ProbeAlignment

Conference Persaud, A; Rangelow, I; Schenkel, T

We describe a scanning probe instrument which integrates ion beams with imaging and alignment functions of a piezo resistive scanning probe in high vacuum. Energetic ions (1 to a few hundred keV) are transported through holes in scanning probe tips [1]. Holes and imaging tips are formed by Focused Ion Beam (FIB) drilling and ion beam assisted thin film deposition. Transport of single ions can be monitored through detection of secondary electrons from highly charged dopant ions (e. g., Bi{sup 45+}) enabling single atom device formation. Fig. 1 shows SEM images of a scanning probe tip formed by ion beammore »« less
Full Text Available
Quantum computer developement with single ion implantation

Journal Article Persaud, A; Park, S; Liddle, J; ... - Quantum Information Processing

Spins of single donor atoms are attractive candidates forlarge scale quantum information processing in silicon. Formation ofdevices with a few qubits is crucial for validation of basic ideas anddevelopment of a scalable architecture. We describe our development of asingle ion implantation technique for placement of single atoms intodevice structures. Collimated highly charged ion beams are aligned with ascanning probe microscope. Enhanced secondary electron emission due tohigh ion charge states (e.g., 31P13+, or 126Te33+) allows efficientdetection of single ion impacts. Studies of electrical activation of lowdose, low energy implants of 31P in silicon show a drastic effect ofdopant segregation to themore »« less
https://doi.org/10.1007/s11128-004-3879-1
Microscopic Examination of the Silicon Surface Subjected to High-Dose Silver Implantation

Journal Article Rogov, A.; Osin, Yu.; Nuzhdin, V.; ... - Technical Physics

Low-energy (E = 30 keV) Ag{sup +} ions have been implanted into single-crystalline Si wafers (c-Si) with an implantation dose varying from 1.25 × 10{sup 15} to 1.5 × 10{sup 17} ions cm{sup –2} and an ion beam current density varying from 2 to 15 μA/cm{sup 2}. The surface morphology of implanted wafers has been examined using scanning electron microscopy, transmission electron microscopy, and atomic force microscopy, and their structure has been studied by means of reflection high-energy electron diffraction and elemental microanalysis. It has been shown that for minimal irradiation doses used in experiments, the surface layer of c-Simore »« less
https://doi.org/10.1134/S1063784219020270

Similar Records