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Title: High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications

Abstract

No abstract prepared.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
789599
Report Number(s):
SAND2001-3645
TRN: US200201%%162
DOE Contract Number:
AC04-94AL85000
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: 1 Dec 2001
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ALUMINIUM NITRIDES; INDIUM NITRIDES; GALLIUM NITRIDES; ELECTRONIC EQUIPMENT; SEMICONDUCTOR MATERIALS

Citation Formats

BACA, ALBERT G., BRIGGS, RONALD D., ALLERMAN, ANDREW A., MITCHELL, CHRISTINE C., FISCHER, ARTHUR J., ASHBY, CAROL I., WRIGHT, ALAN F., and SHUL, RANDY J.. High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications. United States: N. p., 2001. Web. doi:10.2172/789599.
BACA, ALBERT G., BRIGGS, RONALD D., ALLERMAN, ANDREW A., MITCHELL, CHRISTINE C., FISCHER, ARTHUR J., ASHBY, CAROL I., WRIGHT, ALAN F., & SHUL, RANDY J.. High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications. United States. doi:10.2172/789599.
BACA, ALBERT G., BRIGGS, RONALD D., ALLERMAN, ANDREW A., MITCHELL, CHRISTINE C., FISCHER, ARTHUR J., ASHBY, CAROL I., WRIGHT, ALAN F., and SHUL, RANDY J.. 2001. "High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications". United States. doi:10.2172/789599. https://www.osti.gov/servlets/purl/789599.
@article{osti_789599,
title = {High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications},
author = {BACA, ALBERT G. and BRIGGS, RONALD D. and ALLERMAN, ANDREW A. and MITCHELL, CHRISTINE C. and FISCHER, ARTHUR J. and ASHBY, CAROL I. and WRIGHT, ALAN F. and SHUL, RANDY J.},
abstractNote = {No abstract prepared.},
doi = {10.2172/789599},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2001,
month =
}

Technical Report:

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