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Title: ION BEAM SYNTHESIS OF BURIED OXIDE LAYERS IN SILICON CARBIDE

Abstract

No abstract prepared.

Authors:
; ;
Publication Date:
Research Org.:
Los Alamos National Lab., NM (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
786218
Report Number(s):
LA-UR-99-6109
TRN: US200306%%38
DOE Contract Number:
W-7405-ENG-36
Resource Type:
Conference
Resource Relation:
Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 Nov 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ION BEAMS; OXIDES; SILICON CARBIDES; ENERGY BEAM DEPOSITION

Citation Formats

M. ISHIMARU, R. M. DICKERSON, and K. E. SICKAFUS. ION BEAM SYNTHESIS OF BURIED OXIDE LAYERS IN SILICON CARBIDE. United States: N. p., 1999. Web.
M. ISHIMARU, R. M. DICKERSON, & K. E. SICKAFUS. ION BEAM SYNTHESIS OF BURIED OXIDE LAYERS IN SILICON CARBIDE. United States.
M. ISHIMARU, R. M. DICKERSON, and K. E. SICKAFUS. Mon . "ION BEAM SYNTHESIS OF BURIED OXIDE LAYERS IN SILICON CARBIDE". United States. doi:. https://www.osti.gov/servlets/purl/786218.
@article{osti_786218,
title = {ION BEAM SYNTHESIS OF BURIED OXIDE LAYERS IN SILICON CARBIDE},
author = {M. ISHIMARU and R. M. DICKERSON and K. E. SICKAFUS},
abstractNote = {No abstract prepared.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Nov 01 00:00:00 EST 1999},
month = {Mon Nov 01 00:00:00 EST 1999}
}

Conference:
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  • Homogeneous, epitaxial buried layers of 3C-SiC have been formed in Si(100) and Si(111) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1,250 C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favorable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.
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