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Title: ION BEAM SYNTHESIS OF BURIED OXIDE LAYERS IN SILICON CARBIDE

Abstract

No abstract prepared.

Authors:
; ;
Publication Date:
Research Org.:
Los Alamos National Lab., NM (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
786218
Report Number(s):
LA-UR-99-6109
TRN: US200306%%38
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Conference
Resource Relation:
Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 Nov 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ION BEAMS; OXIDES; SILICON CARBIDES; ENERGY BEAM DEPOSITION

Citation Formats

M. ISHIMARU, R. M. DICKERSON, and K. E. SICKAFUS. ION BEAM SYNTHESIS OF BURIED OXIDE LAYERS IN SILICON CARBIDE. United States: N. p., 1999. Web.
M. ISHIMARU, R. M. DICKERSON, & K. E. SICKAFUS. ION BEAM SYNTHESIS OF BURIED OXIDE LAYERS IN SILICON CARBIDE. United States.
M. ISHIMARU, R. M. DICKERSON, and K. E. SICKAFUS. Mon . "ION BEAM SYNTHESIS OF BURIED OXIDE LAYERS IN SILICON CARBIDE". United States. doi:. https://www.osti.gov/servlets/purl/786218.
@article{osti_786218,
title = {ION BEAM SYNTHESIS OF BURIED OXIDE LAYERS IN SILICON CARBIDE},
author = {M. ISHIMARU and R. M. DICKERSON and K. E. SICKAFUS},
abstractNote = {No abstract prepared.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Nov 01 00:00:00 EST 1999},
month = {Mon Nov 01 00:00:00 EST 1999}
}

Conference:
Other availability
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