Development of High Power X-Band Semiconductor RF Switch for Pulse Compression Systems of Future Linear Colliders
We describe development of semiconductor X-band high-power RF switches. The target applications are high-power RF pulse compression systems for future linear colliders. We describe the design methodology of the architecture of the whole switch systems. We present the scaling law that governs the relation between power handling capability and number of elements. We designed and built several active waveguide windows for the active element. The waveguide window is a silicon wafer with an array of four hundred PIN/NIP diodes covering the surface of the window. This waveguide window is located in an over-moded TE01 circular waveguide. The results of high power RF measurements of the active waveguide window are presented. The experiment is performed at power levels of a few megawatts at X-band.
- Research Organization:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC03-76SF00515
- OSTI ID:
- 784865
- Report Number(s):
- SLAC-PUB-8702; TRN: US0108648
- Resource Relation:
- Other Information: PBD: 6 Nov 2000
- Country of Publication:
- United States
- Language:
- English
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