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Title: AlGaN Materials Engineering for Integrated Multi-Function Systems

Abstract

This LDRD is aimed to place Sandia at the forefront of GaN-based technologies. Two important themes of this LDRD are: (1) The demonstration of novel GaN-based devices which have not yet been much explored and yet are coherent with Sandia's and DOE's mission objectives. UV optoelectronic and piezoelectric devices are just two examples. (2) To demonstrate front-end monolithic integration of GaN with Si-based microelectronics. Key issues pertinent to the successful completion of this LDRD have been identified to be (1) The growth and defect control of AlGaN and GaN, and (2) strain relief during/after the heteroepitaxy of GaN on Si and the separation/transfer of GaN layers to different wafer templates.

Authors:
; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
780286
Report Number(s):
SAND2001-0133
TRN: AH200120%%81
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: 1 Jan 2001
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ALUMINIUM NITRIDES; GALLIUM NITRIDES; DEFECTS; MICROELECTRONICS; PIEZOELECTRICITY; ULTRAVIOLET RADIATION; EPITAXY; SILICON; GAN; ALGAN; WIDE BANDGAP SEMICONDUCTORS; POROUS GAN; POROUS SI; STRAIN ENGINEERING; EPITAXIAL GROWTH; MOCVD; MOVPE

Citation Formats

HAN, JUNG, MITCHELL, CHRISTINE C, WALDRIP, KAREN NMN, GUILINGER, TERRY R, KELLY, MICHAEL J, FLEMING, JAMES G, TSAO, SYLVIA SANTA INES, FOLLSTAEDT, DAVID M, WAMPLER, WILLIAM R, LEE, STEPHEN R, CASALNUOVO, STEPHEN A, and MANI, SEETHAMBAL S. AlGaN Materials Engineering for Integrated Multi-Function Systems. United States: N. p., 2001. Web. doi:10.2172/780286.
HAN, JUNG, MITCHELL, CHRISTINE C, WALDRIP, KAREN NMN, GUILINGER, TERRY R, KELLY, MICHAEL J, FLEMING, JAMES G, TSAO, SYLVIA SANTA INES, FOLLSTAEDT, DAVID M, WAMPLER, WILLIAM R, LEE, STEPHEN R, CASALNUOVO, STEPHEN A, & MANI, SEETHAMBAL S. AlGaN Materials Engineering for Integrated Multi-Function Systems. United States. doi:10.2172/780286.
HAN, JUNG, MITCHELL, CHRISTINE C, WALDRIP, KAREN NMN, GUILINGER, TERRY R, KELLY, MICHAEL J, FLEMING, JAMES G, TSAO, SYLVIA SANTA INES, FOLLSTAEDT, DAVID M, WAMPLER, WILLIAM R, LEE, STEPHEN R, CASALNUOVO, STEPHEN A, and MANI, SEETHAMBAL S. Mon . "AlGaN Materials Engineering for Integrated Multi-Function Systems". United States. doi:10.2172/780286. https://www.osti.gov/servlets/purl/780286.
@article{osti_780286,
title = {AlGaN Materials Engineering for Integrated Multi-Function Systems},
author = {HAN, JUNG and MITCHELL, CHRISTINE C and WALDRIP, KAREN NMN and GUILINGER, TERRY R and KELLY, MICHAEL J and FLEMING, JAMES G and TSAO, SYLVIA SANTA INES and FOLLSTAEDT, DAVID M and WAMPLER, WILLIAM R and LEE, STEPHEN R and CASALNUOVO, STEPHEN A and MANI, SEETHAMBAL S},
abstractNote = {This LDRD is aimed to place Sandia at the forefront of GaN-based technologies. Two important themes of this LDRD are: (1) The demonstration of novel GaN-based devices which have not yet been much explored and yet are coherent with Sandia's and DOE's mission objectives. UV optoelectronic and piezoelectric devices are just two examples. (2) To demonstrate front-end monolithic integration of GaN with Si-based microelectronics. Key issues pertinent to the successful completion of this LDRD have been identified to be (1) The growth and defect control of AlGaN and GaN, and (2) strain relief during/after the heteroepitaxy of GaN on Si and the separation/transfer of GaN layers to different wafer templates.},
doi = {10.2172/780286},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}

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