AlGaN Materials Engineering for Integrated Multi-Function Systems

Technical Report · Mon Jan 01 00:00:00 EST 2001

DOI:https://doi.org/10.2172/780286· OSTI ID:780286

HAN, JUNG; MITCHELL, CHRISTINE C; WALDRIP, KAREN NMN; GUILINGER, TERRY R; KELLY, MICHAEL J; FLEMING, JAMES G; TSAO, SYLVIA SANTA INES; FOLLSTAEDT, DAVID M; WAMPLER, WILLIAM R; LEE, STEPHEN R; CASALNUOVO, STEPHEN A; MANI, SEETHAMBAL S

This LDRD is aimed to place Sandia at the forefront of GaN-based technologies. Two important themes of this LDRD are: (1) The demonstration of novel GaN-based devices which have not yet been much explored and yet are coherent with Sandia's and DOE's mission objectives. UV optoelectronic and piezoelectric devices are just two examples. (2) To demonstrate front-end monolithic integration of GaN with Si-based microelectronics. Key issues pertinent to the successful completion of this LDRD have been identified to be (1) The growth and defect control of AlGaN and GaN, and (2) strain relief during/after the heteroepitaxy of GaN on Si and the separation/transfer of GaN layers to different wafer templates.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 780286
• Report Number(s): SAND2001-0133; TRN: AH200120%%81
• Resource Relation: Other Information: PBD: 1 Jan 2001
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM NITRIDES
GALLIUM NITRIDES
DEFECTS
MICROELECTRONICS
PIEZOELECTRICITY
ULTRAVIOLET RADIATION
EPITAXY
SILICON
GAN
ALGAN
WIDE BANDGAP SEMICONDUCTORS
POROUS GAN
POROUS SI
STRAIN ENGINEERING
EPITAXIAL GROWTH
MOCVD
MOVPE