Reduction of threading dislocation density in GaN using an intermediate temperature interlayer
No abstract prepared.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 776607
- Report Number(s):
- LBNL-46165; APPLAB; R&D Project: 513350; TRN: AH200118%%445
- Journal Information:
- Applied Physics Letters, Vol. 77, Issue 22; Other Information: Journal Publication Date: November 27, 2000; PBD: 20 Jun 2000; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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