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Title: Calculation of the ground state of shallow donors in GaAs{sub 1-x}N{sub x}

Abstract

No abstract prepared.

Authors:
; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab., CA (US)
Sponsoring Org.:
USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)
OSTI Identifier:
775129
Report Number(s):
LBNL-45823
Journal ID: ISSN 0003-6951; APPLAB; R&D Project: 513501; TRN: AH200110%%116
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 89; Journal Issue: 1; Other Information: Journal Publication Date:January 1, 2001; PBD: 15 May 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GROUND STATES; GALLIUM NITRIDES; ARSENIC COMPOUNDS; NITRIDES; CALCULATION METHODS

Citation Formats

Wu, J., Walukiewicz, W., and Haller, E.E. Calculation of the ground state of shallow donors in GaAs{sub 1-x}N{sub x}. United States: N. p., 2000. Web.
Wu, J., Walukiewicz, W., & Haller, E.E. Calculation of the ground state of shallow donors in GaAs{sub 1-x}N{sub x}. United States.
Wu, J., Walukiewicz, W., and Haller, E.E. Mon . "Calculation of the ground state of shallow donors in GaAs{sub 1-x}N{sub x}". United States.
@article{osti_775129,
title = {Calculation of the ground state of shallow donors in GaAs{sub 1-x}N{sub x}},
author = {Wu, J. and Walukiewicz, W. and Haller, E.E.},
abstractNote = {No abstract prepared.},
doi = {},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 1,
volume = 89,
place = {United States},
year = {2000},
month = {5}
}