skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaN{sub x}As{sub 1-x}

Abstract

No abstract prepared.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab., CA (US)
Sponsoring Org.:
USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)
OSTI Identifier:
773787
Report Number(s):
LBNL-45985
Journal ID: ISSN 0003-6951; APPLAB; R&D Project: 513501; TRN: US0100773
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 77; Journal Issue: 18; Other Information: PBD: 5 Jun 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRONS; SULFUR IONS; ION IMPLANTATION; GALLIUM NITRIDES; GALLIUM ARSENIDES; ELECTRONIC STRUCTURE

Citation Formats

Yu, K.M., Walukiewicz, W., Shan, W., Wu, J, Ager III, J.W., Haller, E.E., Geisz, J.F., and Ridgway, M.C. Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaN{sub x}As{sub 1-x}. United States: N. p., 2000. Web. doi:10.1063/1.1320872.
Yu, K.M., Walukiewicz, W., Shan, W., Wu, J, Ager III, J.W., Haller, E.E., Geisz, J.F., & Ridgway, M.C. Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaN{sub x}As{sub 1-x}. United States. doi:10.1063/1.1320872.
Yu, K.M., Walukiewicz, W., Shan, W., Wu, J, Ager III, J.W., Haller, E.E., Geisz, J.F., and Ridgway, M.C. Mon . "Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaN{sub x}As{sub 1-x}". United States. doi:10.1063/1.1320872.
@article{osti_773787,
title = {Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaN{sub x}As{sub 1-x}},
author = {Yu, K.M. and Walukiewicz, W. and Shan, W. and Wu, J and Ager III, J.W. and Haller, E.E. and Geisz, J.F. and Ridgway, M.C.},
abstractNote = {No abstract prepared.},
doi = {10.1063/1.1320872},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 77,
place = {United States},
year = {2000},
month = {6}
}