skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Study of high quality GaN layer by OMVPE using an intermediate layer

Abstract

The crystalline quality of heteroepitaxial GaN can be significantly improved if the threading dislocations originating from the interface are not allowed to reach the layer surface where they can propagate to the active device areas and act as harmful defects. Incorporation of an intermediate layer grown at low-temperature has been shown to limit this defect propagation. This method has been proved to be effective but several interlayers have been required in order to reach dislocation density lower than 109/cm2. In this letter, we report on high quality GaN layers grown with the use of only one intermediate layer. The defect analysis shows that the density of dislocation is only 8x107/cm2, compared to over 1010/cm2 for layers grown without the intermediate layer. Electron microscopy on cross-section samples shows that deposition under certain low-temperature conditions directly benefits the quality of the subsequently deposited GaN layer. The growth of the GaN top layer appears to be similar to growth observed for lateral epitaxial overgrowth layers. This observation opens the possibility for using standard GaN growth methods to achieve a dislocation density comparable to that achieved with lateral overgrowth epitaxy.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab., CA (US)
Sponsoring Org.:
USDOE Director, Office of Science (US)
OSTI Identifier:
771876
Report Number(s):
LBNL-46098
Journal ID: ISSN 0022-0248; JCRGAE; R&D Project: 513340; TRN: AH200104%%165
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Journal Article
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 218; Journal Issue: 2-4; Other Information: PBD: 5 Jun 2000; Journal ID: ISSN 0022-0248
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; DEFECTS; VAPOR PHASE EPITAXY; DISLOCATIONS; ELECTRON MICROSCOPY; EPITAXY; TEM GAN OMVPE

Citation Formats

Benamara, Mourad, Liliental-Weber, Z., Kellermann, S., Washburn, J., Mazur, J., and Bourret-Courchesne, E. Study of high quality GaN layer by OMVPE using an intermediate layer. United States: N. p., 2000. Web. doi:10.1016/S0022-0248(00)00568-6.
Benamara, Mourad, Liliental-Weber, Z., Kellermann, S., Washburn, J., Mazur, J., & Bourret-Courchesne, E. Study of high quality GaN layer by OMVPE using an intermediate layer. United States. doi:10.1016/S0022-0248(00)00568-6.
Benamara, Mourad, Liliental-Weber, Z., Kellermann, S., Washburn, J., Mazur, J., and Bourret-Courchesne, E. Mon . "Study of high quality GaN layer by OMVPE using an intermediate layer". United States. doi:10.1016/S0022-0248(00)00568-6.
@article{osti_771876,
title = {Study of high quality GaN layer by OMVPE using an intermediate layer},
author = {Benamara, Mourad and Liliental-Weber, Z. and Kellermann, S. and Washburn, J. and Mazur, J. and Bourret-Courchesne, E.},
abstractNote = {The crystalline quality of heteroepitaxial GaN can be significantly improved if the threading dislocations originating from the interface are not allowed to reach the layer surface where they can propagate to the active device areas and act as harmful defects. Incorporation of an intermediate layer grown at low-temperature has been shown to limit this defect propagation. This method has been proved to be effective but several interlayers have been required in order to reach dislocation density lower than 109/cm2. In this letter, we report on high quality GaN layers grown with the use of only one intermediate layer. The defect analysis shows that the density of dislocation is only 8x107/cm2, compared to over 1010/cm2 for layers grown without the intermediate layer. Electron microscopy on cross-section samples shows that deposition under certain low-temperature conditions directly benefits the quality of the subsequently deposited GaN layer. The growth of the GaN top layer appears to be similar to growth observed for lateral epitaxial overgrowth layers. This observation opens the possibility for using standard GaN growth methods to achieve a dislocation density comparable to that achieved with lateral overgrowth epitaxy.},
doi = {10.1016/S0022-0248(00)00568-6},
journal = {Journal of Crystal Growth},
issn = {0022-0248},
number = 2-4,
volume = 218,
place = {United States},
year = {2000},
month = {6}
}