skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Improvement of the interface quality during thermal oxidation of Al0.98Ga0.02As layers due to the presence of low-temperature-grown GaAs

Abstract

The role of a low-temperature-grown GaAs (LT GaAs) layer on the lateral oxidation of an Al0.98Ga0.02As/GaAs layer structure has been studied by transmission electron microscopy. Results show that structures incorporating LT GaAs develop better quality oxide/GaAs interfaces compared to reference samples without LT GaAs. While the latter have As accumulation in the vicinity of these interfaces, the structures with LT layers display sharper oxide-GaAs interfaces with a reduced concentration of As. These results are explained in terms of the high Ga vacancy concentration in the LT GaAs and the possible influence of those vacancies in enhancing As diffusion away from the oxide-semiconductor interface.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
767603
Report Number(s):
LBNL-45982
Journal ID: ISSN 0003-6951; APPLAB; R&D Project: 43BA01; TRN: AH200038%%148
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 77; Journal Issue: 2; Other Information: PBD: 6 Jun 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIFFUSION; OXIDATION; VACANCIES; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; AL0.98GA0.02AS THERMAL OXIDATION LOW-TEMPERATURE GAAS

Citation Formats

Ferrer, J.C., Liliental-Weber, Z., Reese, H., Chiu, Y.J., and Hu, E. Improvement of the interface quality during thermal oxidation of Al0.98Ga0.02As layers due to the presence of low-temperature-grown GaAs. United States: N. p., 2000. Web. doi:10.1063/1.126925.
Ferrer, J.C., Liliental-Weber, Z., Reese, H., Chiu, Y.J., & Hu, E. Improvement of the interface quality during thermal oxidation of Al0.98Ga0.02As layers due to the presence of low-temperature-grown GaAs. United States. doi:10.1063/1.126925.
Ferrer, J.C., Liliental-Weber, Z., Reese, H., Chiu, Y.J., and Hu, E. Tue . "Improvement of the interface quality during thermal oxidation of Al0.98Ga0.02As layers due to the presence of low-temperature-grown GaAs". United States. doi:10.1063/1.126925.
@article{osti_767603,
title = {Improvement of the interface quality during thermal oxidation of Al0.98Ga0.02As layers due to the presence of low-temperature-grown GaAs},
author = {Ferrer, J.C. and Liliental-Weber, Z. and Reese, H. and Chiu, Y.J. and Hu, E.},
abstractNote = {The role of a low-temperature-grown GaAs (LT GaAs) layer on the lateral oxidation of an Al0.98Ga0.02As/GaAs layer structure has been studied by transmission electron microscopy. Results show that structures incorporating LT GaAs develop better quality oxide/GaAs interfaces compared to reference samples without LT GaAs. While the latter have As accumulation in the vicinity of these interfaces, the structures with LT layers display sharper oxide-GaAs interfaces with a reduced concentration of As. These results are explained in terms of the high Ga vacancy concentration in the LT GaAs and the possible influence of those vacancies in enhancing As diffusion away from the oxide-semiconductor interface.},
doi = {10.1063/1.126925},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 2,
volume = 77,
place = {United States},
year = {2000},
month = {6}
}