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Title: Recombination Processes on Low Bandgap Antimonides for Thermophotovoltaic Applications

Abstract

Recombination processes in antimonide-based (TPV) devices have been investigated using a technique, in which a Nd-YAG pulsed laser is materials for thermophotovoltaic radio-frequency (RF) photoreflectance used to excite excess carriers and the short-pulse response and photoconductivity decay are monitored with an inductively-coupled non-contacting RF probe. The system has been used to characterize surface and bulk recombination mechanisms in Sb-based materials.

Authors:
 [1]
  1. Rensselaer Polytechnic Inst., Troy, NY (United States)
Publication Date:
Research Org.:
Rensselaer Polytechnic Inst., Troy, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
767326
Report Number(s):
KAPL-P-000323; K99136
DOE Contract Number:  
AC12-76SN00052
Resource Type:
Thesis/Dissertation
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Saroop, Sudesh. Recombination Processes on Low Bandgap Antimonides for Thermophotovoltaic Applications. United States: N. p., 1999. Web. doi:10.2172/767326.
Saroop, Sudesh. Recombination Processes on Low Bandgap Antimonides for Thermophotovoltaic Applications. United States. doi:10.2172/767326.
Saroop, Sudesh. Wed . "Recombination Processes on Low Bandgap Antimonides for Thermophotovoltaic Applications". United States. doi:10.2172/767326. https://www.osti.gov/servlets/purl/767326.
@article{osti_767326,
title = {Recombination Processes on Low Bandgap Antimonides for Thermophotovoltaic Applications},
author = {Saroop, Sudesh},
abstractNote = {Recombination processes in antimonide-based (TPV) devices have been investigated using a technique, in which a Nd-YAG pulsed laser is materials for thermophotovoltaic radio-frequency (RF) photoreflectance used to excite excess carriers and the short-pulse response and photoconductivity decay are monitored with an inductively-coupled non-contacting RF probe. The system has been used to characterize surface and bulk recombination mechanisms in Sb-based materials.},
doi = {10.2172/767326},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {9}
}

Thesis/Dissertation:
Other availability
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