Recombination Processes on Low Bandgap Antimonides for Thermophotovoltaic Applications
- Rensselaer Polytechnic Inst., Troy, NY (United States)
Recombination processes in antimonide-based (TPV) devices have been investigated using a technique, in which a Nd-YAG pulsed laser is materials for thermophotovoltaic radio-frequency (RF) photoreflectance used to excite excess carriers and the short-pulse response and photoconductivity decay are monitored with an inductively-coupled non-contacting RF probe. The system has been used to characterize surface and bulk recombination mechanisms in Sb-based materials.
- Research Organization:
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 767326
- Report Number(s):
- KAPL-P-000323; K99136
- Country of Publication:
- United States
- Language:
- English
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