Accommodation of strain in ultrathin InAs/GaAs films

Journal Article · Sat Jul 15 00:00:00 EDT 1995 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.52.R2281· OSTI ID:76468

Woicik, J C; Pellegrino, J G; Southworth, S H; Shaw, P S; Karlin, B A; Bouldin, C E ^[1]; Miyano, K E ^[2]

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1. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
2. Department of Physics, Brooklyn College, Brooklyn, New York 11210 (United States)

X-ray standing-wave and extended x-ray-absorption fine-structure measurements have determined the strain and bond distortions in a buried InAs monolayer grown epitaxially on GaAs(001). The In atoms are found to reside 1.64{plus_minus}0.03 A above the last-As plane of the GaAs substrate with an In-As bond length of 2.57{plus_minus}0.02 A. Relative to bulk InAs, this corresponds to an 8% expansion in the In-As planar distance perpendicular to the interface and a 0.05-A compression in the In-As bond length. This experiment indicates that macroscopic-elastic theory describes the distortions in InAs/GaAs(001) films even in the monolayer limit.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 76468
• Journal Information: Physical Review, B: Condensed Matter, Vol. 52, Issue 4; Other Information: PBD: 15 Jul 1995
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
THIN FILMS
STRAINS
INDIUM ARSENIDES
GALLIUM ARSENIDES
X-RAY SPECTROSCOPY
BOND LENGTHS