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A Mechanism for Enhanced Low-Dose-Rate Sensitivity of Bipolar Transistors

Journal Article · · IEEE Transactions on Nuclear Science
OSTI ID:764044
 [1]; ; ; ;
  1. Sandia National Laboratories
+ Show Author Affiliations
No abstract prepared.
Research Organization:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC04-94AL85000;
OSTI ID:
764044
Report Number(s):
SAND2000-2376J
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science
Country of Publication:
United States
Language:
English

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Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
HYDROGEN RADIOLYSIS MECHANISM
LOW DOSE REATE EFFECT
RADIATION EFFECTS
SENSITIVITY
SILICON DIOXIDE
SILICON OXIDES
TRANSISTORS