skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um

Abstract

Selectively oxidized vertical cavity lasers emitting at 1294 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave at and above room temperature. The lasers employ two n-type Al{sub 0.94}Ga{sub 0.06}As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55 C. These lasers exhibit the longest wavelength reported to date for vertical cavity surface emitting lasers grown on GaAs substrates.

Authors:
; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
756436
Report Number(s):
SAND2000-1414J
TRN: AH200022%%170
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Electronic Letters
Additional Journal Information:
Other Information: Submitted to Electronic Letters; PBD: 5 Jun 2000
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; INDIUM ARSENIDES; INDIUM NITRIDES; GALLIUM ARSENIDES; GALLIUM NITRIDES; INFRARED RADIATION; AMBIENT TEMPERATURE; LASER CAVITIES; LASER MIRRORS; BRAGG REFLECTION

Citation Formats

CHOQUETTE,KENT D., KLEM,JOHN F., FISCHER,ARTHUR J., SPAHN,OLGA B., ALLERMAN,ANDREW A., FRITZ,IAN J., KURTZ,STEVEN R., BREILAND,WILLIAM G., SIEG,ROBERT M., GEIB,KENT M., SCOTT,J.W., and NAONE,R.L. Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um. United States: N. p., 2000. Web. doi:10.1049/el:20000928.
CHOQUETTE,KENT D., KLEM,JOHN F., FISCHER,ARTHUR J., SPAHN,OLGA B., ALLERMAN,ANDREW A., FRITZ,IAN J., KURTZ,STEVEN R., BREILAND,WILLIAM G., SIEG,ROBERT M., GEIB,KENT M., SCOTT,J.W., & NAONE,R.L. Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um. United States. doi:10.1049/el:20000928.
CHOQUETTE,KENT D., KLEM,JOHN F., FISCHER,ARTHUR J., SPAHN,OLGA B., ALLERMAN,ANDREW A., FRITZ,IAN J., KURTZ,STEVEN R., BREILAND,WILLIAM G., SIEG,ROBERT M., GEIB,KENT M., SCOTT,J.W., and NAONE,R.L. Mon . "Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um". United States. doi:10.1049/el:20000928. https://www.osti.gov/servlets/purl/756436.
@article{osti_756436,
title = {Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um},
author = {CHOQUETTE,KENT D. and KLEM,JOHN F. and FISCHER,ARTHUR J. and SPAHN,OLGA B. and ALLERMAN,ANDREW A. and FRITZ,IAN J. and KURTZ,STEVEN R. and BREILAND,WILLIAM G. and SIEG,ROBERT M. and GEIB,KENT M. and SCOTT,J.W. and NAONE,R.L.},
abstractNote = {Selectively oxidized vertical cavity lasers emitting at 1294 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave at and above room temperature. The lasers employ two n-type Al{sub 0.94}Ga{sub 0.06}As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55 C. These lasers exhibit the longest wavelength reported to date for vertical cavity surface emitting lasers grown on GaAs substrates.},
doi = {10.1049/el:20000928},
journal = {Electronic Letters},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {6}
}