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Title: Electronic defects and interface potentials for Al oxide films on Al and their relationship to electrochemical properties

Abstract

The relative electronic defect densities and oxide interface potentials were determined for naturally-occurring and synthetic Al oxides on Al. In addition, the effect of electrochemical treatment on the oxide electrical properties was assessed. The measurements revealed (1) that the open circuit potential of Al in aqueous solution is inversely correlated with the oxide electronic defect density (viz., lower oxide conductivities are correlated with higher open circuit potentials), and (2) the electronic defect density within the Al oxide is increased upon exposure to an aqueous electrolyte at open circuit or applied cathodic potentials, while the electronic defect density is reduced upon exposure to slight anodic potentials in solution. This last result, combined with recent theoretical predictions, suggests that hydrogen may be associated with electronic defects within the Al oxide, and that this H may be a mobile species, diffusing as H{sup +}. The potential drop across the oxide layer when immersed in solution at open circuit conditions was also estimated and found to be 0.3 V, with the field direction attracting positive charge towards the Al/oxide interface.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
756415
Report Number(s):
SAND2000-1401C
TRN: AH200022%%39
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Electrochemical Society Meeting, Toronto, Ontario (CA), 05/14/2000--05/18/2000; Other Information: PBD: 1 Jun 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; ELECTRONIC STRUCTURE; ALUMINIUM; INTERFACES; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; HYDROGEN; DIFFUSION; VOLTAGE DROP

Citation Formats

SULLIVAN,JOHN P., DUNN,ROBERTO G., BARBOUR,J. CHARLES, WALL,FREDERICK D., MISSERT,NANCY A., and BUCHHEIT,R.G. Electronic defects and interface potentials for Al oxide films on Al and their relationship to electrochemical properties. United States: N. p., 2000. Web.
SULLIVAN,JOHN P., DUNN,ROBERTO G., BARBOUR,J. CHARLES, WALL,FREDERICK D., MISSERT,NANCY A., & BUCHHEIT,R.G. Electronic defects and interface potentials for Al oxide films on Al and their relationship to electrochemical properties. United States.
SULLIVAN,JOHN P., DUNN,ROBERTO G., BARBOUR,J. CHARLES, WALL,FREDERICK D., MISSERT,NANCY A., and BUCHHEIT,R.G. Thu . "Electronic defects and interface potentials for Al oxide films on Al and their relationship to electrochemical properties". United States. https://www.osti.gov/servlets/purl/756415.
@article{osti_756415,
title = {Electronic defects and interface potentials for Al oxide films on Al and their relationship to electrochemical properties},
author = {SULLIVAN,JOHN P. and DUNN,ROBERTO G. and BARBOUR,J. CHARLES and WALL,FREDERICK D. and MISSERT,NANCY A. and BUCHHEIT,R.G.},
abstractNote = {The relative electronic defect densities and oxide interface potentials were determined for naturally-occurring and synthetic Al oxides on Al. In addition, the effect of electrochemical treatment on the oxide electrical properties was assessed. The measurements revealed (1) that the open circuit potential of Al in aqueous solution is inversely correlated with the oxide electronic defect density (viz., lower oxide conductivities are correlated with higher open circuit potentials), and (2) the electronic defect density within the Al oxide is increased upon exposure to an aqueous electrolyte at open circuit or applied cathodic potentials, while the electronic defect density is reduced upon exposure to slight anodic potentials in solution. This last result, combined with recent theoretical predictions, suggests that hydrogen may be associated with electronic defects within the Al oxide, and that this H may be a mobile species, diffusing as H{sup +}. The potential drop across the oxide layer when immersed in solution at open circuit conditions was also estimated and found to be 0.3 V, with the field direction attracting positive charge towards the Al/oxide interface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {6}
}

Conference:
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