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Title: Recent developments in high-efficiency PV cells

Abstract

Enormous progress has been made in recent years on a number of photovoltaic (PV) materials and devices in terms of conversion efficiencies. Ultrahigh-efficiency (>30{percent}) PV cells have been fabricated from gallium arsenide (GaAs) and its ternary alloys such as gallium indium phosphide (GaInP{sub 2}). The high-efficiency GaAs-based solar cells are being produced on a commercial scale, particularly for space applications. Efficiencies in the range of 18{percent} to 24{percent} have been achieved in traditional silicon-based devices fabricated from both multicrystalline and single-crystal materials. Major advances in efficiency have also been made on various thin-film solar cells based on amorphous silicon (aSi:H), copper gallium indium diselenide (CIGS), and cadmium telluride materials. This paper gives a brief overview of the recent progress in PV cell efficiencies based on these materials and devices.

Authors:
Publication Date:
Research Org.:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
756334
Report Number(s):
NREL/CP-590-28060
TRN: AH200017%%202
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Conference
Resource Relation:
Conference: World Renewable Energy Congress VI, Brighton (GB), 07/01/2000--07/07/2000; Other Information: PBD: 22 May 2000
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SOLAR CELLS; PHOTOVOLTAIC CONVERSION; CADMIUM TELLURIDE SOLAR CELLS; GALLIUM ARSENIDE SOLAR CELLS; EFFICIENCY; SILICON SOLAR CELLS; PHOTOVOLTAICS; THIN FILMS; AMORPHOUS SILICON; COPPER GALLIUM INDIUM DISELENIDE; CADMIUM TELLURIDE; GALLIUM ARSENIDE; GALLIUM INDIUM PHOSPHIDE; TITANIUM DIOXIDE

Citation Formats

Deb, S. Recent developments in high-efficiency PV cells. United States: N. p., 2000. Web. doi:10.1016/B978-008043865-8/50584-5.
Deb, S. Recent developments in high-efficiency PV cells. United States. doi:10.1016/B978-008043865-8/50584-5.
Deb, S. Mon . "Recent developments in high-efficiency PV cells". United States. doi:10.1016/B978-008043865-8/50584-5. https://www.osti.gov/servlets/purl/756334.
@article{osti_756334,
title = {Recent developments in high-efficiency PV cells},
author = {Deb, S.},
abstractNote = {Enormous progress has been made in recent years on a number of photovoltaic (PV) materials and devices in terms of conversion efficiencies. Ultrahigh-efficiency (>30{percent}) PV cells have been fabricated from gallium arsenide (GaAs) and its ternary alloys such as gallium indium phosphide (GaInP{sub 2}). The high-efficiency GaAs-based solar cells are being produced on a commercial scale, particularly for space applications. Efficiencies in the range of 18{percent} to 24{percent} have been achieved in traditional silicon-based devices fabricated from both multicrystalline and single-crystal materials. Major advances in efficiency have also been made on various thin-film solar cells based on amorphous silicon (aSi:H), copper gallium indium diselenide (CIGS), and cadmium telluride materials. This paper gives a brief overview of the recent progress in PV cell efficiencies based on these materials and devices.},
doi = {10.1016/B978-008043865-8/50584-5},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}

Conference:
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