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Title: Photoconductive properties of GaAs{sub 1{minus}x}N{sub x} double heterostructures as a function of excitation wavelength

Abstract

The ternary semiconductor GaAs{sub 1{minus}x}N{sub x} with 0 < x < 0.3 can be grown epitaxially on GaAs and has a very large bowing coefficient. The alloy bandgap can be reduced to about 1.0 eV with about a 3% nitrogen addition. In this work, the authors measured the internal spectral response and recombination lifetime of a number of alloys using the ultra-high frequency photoconductive decay (UHFPCD) method. The data shows that the photoconductive excitation spectra of the GaAs{sub 0.97}N{sub 0.03} alloy shows a gradual increase in response through the absorption edge near E{sub g}. This contrasts with most direct bandgap semiconductors that show a steep onset of photoresponse at E{sub g}. The recombination lifetimes frequently are much longer than expected from radiative recombination and often exceeded 1.0{mu}s. The data were analyzed in terms of a band model that includes large potential fluctuations in the conduction band due to the random distribution of nitrogen atoms in the alloy.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
756333
Report Number(s):
NREL/CP-520-27634
TRN: AH200017%%241
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Conference
Resource Relation:
Conference: Materials Research Society's 1999 Fall Meeting, Boston. MA (US), 11/29/1999--12/03/1999; Other Information: PBD: 22 May 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SEMICONDUCTOR MATERIALS; GALLIUM NITRIDES; GALLIUM ARSENIDES; ENERGY GAP; HETEROJUNCTIONS; PHOTOVOLTAIC CONVERSION; RECOMBINATION; PHOTOVOLTAICS; DOUBLE HETEROSTRUCTURES; RECOMBINATION LIFETIMES; ULTRA-HIGH FREQUENCY PHOTOCONDUCTIVE DECAYSPECTRAL RESPONSE; PHOTOCONDUCTIVITY

Citation Formats

Ahrenkiel, R. K., Mascarenhas, A., Johnston, S. W., Zhang, Y., Friedman, D. J., and Vernon, S. M. Photoconductive properties of GaAs{sub 1{minus}x}N{sub x} double heterostructures as a function of excitation wavelength. United States: N. p., 2000. Web.
Ahrenkiel, R. K., Mascarenhas, A., Johnston, S. W., Zhang, Y., Friedman, D. J., & Vernon, S. M. Photoconductive properties of GaAs{sub 1{minus}x}N{sub x} double heterostructures as a function of excitation wavelength. United States.
Ahrenkiel, R. K., Mascarenhas, A., Johnston, S. W., Zhang, Y., Friedman, D. J., and Vernon, S. M. Mon . "Photoconductive properties of GaAs{sub 1{minus}x}N{sub x} double heterostructures as a function of excitation wavelength". United States. https://www.osti.gov/servlets/purl/756333.
@article{osti_756333,
title = {Photoconductive properties of GaAs{sub 1{minus}x}N{sub x} double heterostructures as a function of excitation wavelength},
author = {Ahrenkiel, R. K. and Mascarenhas, A. and Johnston, S. W. and Zhang, Y. and Friedman, D. J. and Vernon, S. M.},
abstractNote = {The ternary semiconductor GaAs{sub 1{minus}x}N{sub x} with 0 < x < 0.3 can be grown epitaxially on GaAs and has a very large bowing coefficient. The alloy bandgap can be reduced to about 1.0 eV with about a 3% nitrogen addition. In this work, the authors measured the internal spectral response and recombination lifetime of a number of alloys using the ultra-high frequency photoconductive decay (UHFPCD) method. The data shows that the photoconductive excitation spectra of the GaAs{sub 0.97}N{sub 0.03} alloy shows a gradual increase in response through the absorption edge near E{sub g}. This contrasts with most direct bandgap semiconductors that show a steep onset of photoresponse at E{sub g}. The recombination lifetimes frequently are much longer than expected from radiative recombination and often exceeded 1.0{mu}s. The data were analyzed in terms of a band model that includes large potential fluctuations in the conduction band due to the random distribution of nitrogen atoms in the alloy.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}

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