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Title: Atmospheric pressure chemical vapor deposition of CdTe for high efficiency thin film PV devices: Annual subcontract report, 26 January 1999--25 January 2000

Abstract

ITN's three year project Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High Efficiency Thin Film PV Devices has the overall objectives of improving thin film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16% efficient CdTe PV films, i.e., close spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstration of APCVD of CdTe films, discovery of fundamental mass transport parameters, application of established engineering principles to the deposition of CdTe films, and verification of reactor design principles which could be used to design high throughput, high yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation and ultimately to higher device conversion efficiency and greater stability. Under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two dimension measurements and modeling. Accomplishments of the second year of the APCVD subcontract include: deposition of the first APCVD CdTe; identification of deficiencies in the first generationmore » APCVD reactor; design, fabrication and testing of a ``simplified'' APCVD reactor; deposition of the first dense, adherent APCVD CdTe films; fabrication of the first APCVD CdTe PV device; modeling effects of CdSTe and SnOx layers; and electrical modeling of grain boundaries.« less

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab., Golden, CO (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
756255
Report Number(s):
NREL/SR-520-28375
TRN: AH200017%%49
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: 30 May 2000
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CADMIUM TELLURIDES; CHEMICAL VAPOR DEPOSITION; CADMIUM TELLURIDE SOLAR CELLS; FABRICATION; MASS TRANSFER; CHEMICAL REACTORS; MATERIALS HANDLING EQUIPMENT; DESIGN; PERFORMANCE TESTING; PHOTOVOLTAICS; ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; APCVD; CADMIUM TELLURIDE; CDTE; REACTORS; THIN-FILM SOLAR CELLS; MODELING; GRAIN BOUNDARIES; THIN FILM PV PARTNERSHIP

Citation Formats

Meyers, P. V., Kee, R., Wolden, C., Kestner, J., Raja, L., Kaydanov, V., Ohno, T., Collins, R., and Fahrenbruch, A. Atmospheric pressure chemical vapor deposition of CdTe for high efficiency thin film PV devices: Annual subcontract report, 26 January 1999--25 January 2000. United States: N. p., 2000. Web. doi:10.2172/756255.
Meyers, P. V., Kee, R., Wolden, C., Kestner, J., Raja, L., Kaydanov, V., Ohno, T., Collins, R., & Fahrenbruch, A. Atmospheric pressure chemical vapor deposition of CdTe for high efficiency thin film PV devices: Annual subcontract report, 26 January 1999--25 January 2000. United States. doi:10.2172/756255.
Meyers, P. V., Kee, R., Wolden, C., Kestner, J., Raja, L., Kaydanov, V., Ohno, T., Collins, R., and Fahrenbruch, A. Tue . "Atmospheric pressure chemical vapor deposition of CdTe for high efficiency thin film PV devices: Annual subcontract report, 26 January 1999--25 January 2000". United States. doi:10.2172/756255. https://www.osti.gov/servlets/purl/756255.
@article{osti_756255,
title = {Atmospheric pressure chemical vapor deposition of CdTe for high efficiency thin film PV devices: Annual subcontract report, 26 January 1999--25 January 2000},
author = {Meyers, P. V. and Kee, R. and Wolden, C. and Kestner, J. and Raja, L. and Kaydanov, V. and Ohno, T. and Collins, R. and Fahrenbruch, A.},
abstractNote = {ITN's three year project Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High Efficiency Thin Film PV Devices has the overall objectives of improving thin film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16% efficient CdTe PV films, i.e., close spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstration of APCVD of CdTe films, discovery of fundamental mass transport parameters, application of established engineering principles to the deposition of CdTe films, and verification of reactor design principles which could be used to design high throughput, high yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation and ultimately to higher device conversion efficiency and greater stability. Under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two dimension measurements and modeling. Accomplishments of the second year of the APCVD subcontract include: deposition of the first APCVD CdTe; identification of deficiencies in the first generation APCVD reactor; design, fabrication and testing of a ``simplified'' APCVD reactor; deposition of the first dense, adherent APCVD CdTe films; fabrication of the first APCVD CdTe PV device; modeling effects of CdSTe and SnOx layers; and electrical modeling of grain boundaries.},
doi = {10.2172/756255},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}

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