GaInNAs laser gain
Conference
·
OSTI ID:756125
The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 756125
- Report Number(s):
- SAND2000-1298C; TRN: AH200021%%416
- Resource Relation:
- Conference: SPIE International Symposium on Optoelectronics '00, San Jose, CA (US), 01/23/2000--01/28/2000; Other Information: PBD: 23 May 2000
- Country of Publication:
- United States
- Language:
- English
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