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Title: Development of 1.25 eV InGaAsN for triple junction solar cells

Abstract

Development of next generation high efficiency space monolithic multifunction solar cells will involve the development of new materials lattice matched to GaAs. One promising material is 1.05 eV InGaAsN, to be used in a four junction GaInP{sub 2}/GaAs/InGaAsN/Ge device. The AMO theoretical efficiency of such a device is 38--42%. Development of the 1.05 eV InGaAsN material for photovoltaic applications, however, has been difficult. Low electron mobilities and short minority carrier lifetimes have resulted in short minority carrier diffusion lengths. Increasing the nitrogen incorporation decreases the minority carrier lifetime. The authors are looking at a more modest proposal, developing 1.25 eV InGaAsN for a triple junction GaInP{sub 2}/InGaAsN/Ge device. The AMO theoretical efficiency of this device is 30--34%. Less nitrogen and indium are required to lower the bandgap to 1.25 eV and maintain the lattice matching to GaAs. Hence, development and optimization of the 1.25 eV material for photovoltaic devices should be easier than that for the 1.05 eV material.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
756112
Report Number(s):
SAND2000-1233C
TRN: AH200021%%130
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 28th IEEE Photovoltaics Specialists Conference, Anchorage, AK (US), 09/19/2000--09/22/2000; Other Information: PBD: 16 May 2000
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; GALLIUM ARSENIDE SOLAR CELLS; INDIUM NITRIDES; GALLIUM NITRIDES; ARSENIC COMPOUNDS; NITRIDES; GALLIUM PHOSPHIDE SOLAR CELLS; INDIUM PHOSPHIDE SOLAR CELLS; QUANTUM EFFICIENCY; FABRICATION; PERFORMANCE TESTING

Citation Formats

LI,N.Y., SHARPS,P.R., HILLS,J.S., HOU,H., CHANG,PING-CHIH, and BACA,ALBERT G. Development of 1.25 eV InGaAsN for triple junction solar cells. United States: N. p., 2000. Web.
LI,N.Y., SHARPS,P.R., HILLS,J.S., HOU,H., CHANG,PING-CHIH, & BACA,ALBERT G. Development of 1.25 eV InGaAsN for triple junction solar cells. United States.
LI,N.Y., SHARPS,P.R., HILLS,J.S., HOU,H., CHANG,PING-CHIH, and BACA,ALBERT G. Tue . "Development of 1.25 eV InGaAsN for triple junction solar cells". United States. https://www.osti.gov/servlets/purl/756112.
@article{osti_756112,
title = {Development of 1.25 eV InGaAsN for triple junction solar cells},
author = {LI,N.Y. and SHARPS,P.R. and HILLS,J.S. and HOU,H. and CHANG,PING-CHIH and BACA,ALBERT G.},
abstractNote = {Development of next generation high efficiency space monolithic multifunction solar cells will involve the development of new materials lattice matched to GaAs. One promising material is 1.05 eV InGaAsN, to be used in a four junction GaInP{sub 2}/GaAs/InGaAsN/Ge device. The AMO theoretical efficiency of such a device is 38--42%. Development of the 1.05 eV InGaAsN material for photovoltaic applications, however, has been difficult. Low electron mobilities and short minority carrier lifetimes have resulted in short minority carrier diffusion lengths. Increasing the nitrogen incorporation decreases the minority carrier lifetime. The authors are looking at a more modest proposal, developing 1.25 eV InGaAsN for a triple junction GaInP{sub 2}/InGaAsN/Ge device. The AMO theoretical efficiency of this device is 30--34%. Less nitrogen and indium are required to lower the bandgap to 1.25 eV and maintain the lattice matching to GaAs. Hence, development and optimization of the 1.25 eV material for photovoltaic devices should be easier than that for the 1.05 eV material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}

Conference:
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