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Title: Composition and structure of sputter deposited erbium hydride thin films

Abstract

Erbium hydride thin films are grown onto polished, a-axis {alpha} Al{sub 2}O{sub 3} (sapphire) substrates by reactive ion beam sputtering and analyzed to determine composition, phase and microstructure. Erbium is sputtered while maintaining a H{sub 2} partial pressure of 1.4 x 10{sup {minus}4} Torr. Growth is conducted at several substrate temperatures between 30 and 500 C. Rutherford backscattering spectrometry (RBS) and elastic recoil detection analyses after deposition show that the H/Er areal density ratio is approximately 3:1 for growth temperatures of 30, 150 and 275 C, while for growth above {approximately}430 C, the ratio of hydrogen to metal is closer to 2:1. However, x-ray diffraction shows that all films have a cubic metal sublattice structure corresponding to that of ErH{sub 2}. RBS and Auger electron that sputtered erbium hydride thin films are relatively free of impurities.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
756104
Report Number(s):
SAND2000-1177C
TRN: AH200021%%125
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Materials Research Society, San Francisco, CA (US), 04/24/2000--04/28/2000; Other Information: PBD: 10 May 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION; ERBIUM HYDRIDES; ENERGY BEAM DEPOSITION; THIN FILMS; CHEMICAL COMPOSITION; PHASE STUDIES; MICROSTRUCTURE; WELL LOGGING EQUIPMENT

Citation Formats

ADAMS,DAVID P., ROMERO,JUAN A., RODRIGUEZ,MARK A., FLORO,JERROLD A., and BANKS,JAMES C. Composition and structure of sputter deposited erbium hydride thin films. United States: N. p., 2000. Web.
ADAMS,DAVID P., ROMERO,JUAN A., RODRIGUEZ,MARK A., FLORO,JERROLD A., & BANKS,JAMES C. Composition and structure of sputter deposited erbium hydride thin films. United States.
ADAMS,DAVID P., ROMERO,JUAN A., RODRIGUEZ,MARK A., FLORO,JERROLD A., and BANKS,JAMES C. Wed . "Composition and structure of sputter deposited erbium hydride thin films". United States. https://www.osti.gov/servlets/purl/756104.
@article{osti_756104,
title = {Composition and structure of sputter deposited erbium hydride thin films},
author = {ADAMS,DAVID P. and ROMERO,JUAN A. and RODRIGUEZ,MARK A. and FLORO,JERROLD A. and BANKS,JAMES C.},
abstractNote = {Erbium hydride thin films are grown onto polished, a-axis {alpha} Al{sub 2}O{sub 3} (sapphire) substrates by reactive ion beam sputtering and analyzed to determine composition, phase and microstructure. Erbium is sputtered while maintaining a H{sub 2} partial pressure of 1.4 x 10{sup {minus}4} Torr. Growth is conducted at several substrate temperatures between 30 and 500 C. Rutherford backscattering spectrometry (RBS) and elastic recoil detection analyses after deposition show that the H/Er areal density ratio is approximately 3:1 for growth temperatures of 30, 150 and 275 C, while for growth above {approximately}430 C, the ratio of hydrogen to metal is closer to 2:1. However, x-ray diffraction shows that all films have a cubic metal sublattice structure corresponding to that of ErH{sub 2}. RBS and Auger electron that sputtered erbium hydride thin films are relatively free of impurities.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}

Conference:
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