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Title: Focused ion beam damage to MOS integrated circuits

Abstract

Commercial focused ion beam (FIB) systems are commonly used to image integrated circuits (ICS) after device processing, especially in failure analysis applications. FIB systems are also often employed to repair faults in metal lines for otherwise functioning ICS, and are being evaluated for applications in film deposition and nanofabrication. A problem that is often seen in FIB imaging and repair is that ICS can be damaged during the exposure process. This can result in degraded response or out-right circuit failure. Because FIB processes typically require the surface of an IC to be exposed to an intense beam of 30--50 keV Ga{sup +} ions, both charging and secondary radiation damage are potential concerns. In previous studies, both types of effects have been suggested as possible causes of device degradation, depending on the type of device examined and/or the bias conditions. Understanding the causes of this damage is important for ICS that are imaged or repaired by a FIB between manufacture and operation, since the performance and reliability of a given IC is otherwise at risk in subsequent system application. In this summary, the authors discuss the relative roles of radiation damage and charging effects during FIB imaging. Data from exposures ofmore » packaged parts under controlled bias indicate the possibility for secondary radiation damage during FIB exposure. On the other hand, FIB exposure of unbiased wafers (a more common application) typically results in damage caused by high-voltage stress or electrostatic discharge. Implications for FIB exposure and subsequent IC use are discussed.« less

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
756102
Report Number(s):
SAND2000-1163C
TRN: US0003797
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: IEEE Nuclear and Space Radiation Effects Conference, Reno, NV (US), 07/24/2000--07/28/2000; Other Information: PBD: 10 May 2000
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; INTEGRATED CIRCUITS; PHYSICAL RADIATION EFFECTS; ION BEAMS; USES; GALLIUM IONS; CHARGE COLLECTION; MATERIALS TESTING

Citation Formats

FLEETWOOD,D.M., CAMPBELL,ANN N., HEMBREE,CHARLES E., TANGYUNYONG,PAIBOON, JESSING,JEFFREY R., and SODEN,JERRY M. Focused ion beam damage to MOS integrated circuits. United States: N. p., 2000. Web.
FLEETWOOD,D.M., CAMPBELL,ANN N., HEMBREE,CHARLES E., TANGYUNYONG,PAIBOON, JESSING,JEFFREY R., & SODEN,JERRY M. Focused ion beam damage to MOS integrated circuits. United States.
FLEETWOOD,D.M., CAMPBELL,ANN N., HEMBREE,CHARLES E., TANGYUNYONG,PAIBOON, JESSING,JEFFREY R., and SODEN,JERRY M. Wed . "Focused ion beam damage to MOS integrated circuits". United States. https://www.osti.gov/servlets/purl/756102.
@article{osti_756102,
title = {Focused ion beam damage to MOS integrated circuits},
author = {FLEETWOOD,D.M. and CAMPBELL,ANN N. and HEMBREE,CHARLES E. and TANGYUNYONG,PAIBOON and JESSING,JEFFREY R. and SODEN,JERRY M.},
abstractNote = {Commercial focused ion beam (FIB) systems are commonly used to image integrated circuits (ICS) after device processing, especially in failure analysis applications. FIB systems are also often employed to repair faults in metal lines for otherwise functioning ICS, and are being evaluated for applications in film deposition and nanofabrication. A problem that is often seen in FIB imaging and repair is that ICS can be damaged during the exposure process. This can result in degraded response or out-right circuit failure. Because FIB processes typically require the surface of an IC to be exposed to an intense beam of 30--50 keV Ga{sup +} ions, both charging and secondary radiation damage are potential concerns. In previous studies, both types of effects have been suggested as possible causes of device degradation, depending on the type of device examined and/or the bias conditions. Understanding the causes of this damage is important for ICS that are imaged or repaired by a FIB between manufacture and operation, since the performance and reliability of a given IC is otherwise at risk in subsequent system application. In this summary, the authors discuss the relative roles of radiation damage and charging effects during FIB imaging. Data from exposures of packaged parts under controlled bias indicate the possibility for secondary radiation damage during FIB exposure. On the other hand, FIB exposure of unbiased wafers (a more common application) typically results in damage caused by high-voltage stress or electrostatic discharge. Implications for FIB exposure and subsequent IC use are discussed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}

Conference:
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