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Title: Analysis of lateral mode behavior in broad-area InGaN quantum well lasers

Abstract

A wave-optical model that is coupled to a microscopic gain theory is used to investigate lateral mode behavior in group III nitride quantum well lasers. Beam filamentation due to self-focusing in the gain medium is found to limit fundamental-mode output to narrow stripe lasers or to operation close to lasing threshold. Differences between nitride and conventional near-infrared semiconductor lasers arise because of band structure differences, in particular, the presence of a strong quantum-confined Stark effect in the former. Increasing mirror reflectivities in plane-plane resonators to reduce lasing threshold current tends to exacerbate the filamentation problem. On the other hand, a negative-branch unstable resonator is found to mitigate filament effects, enabling fundamental-mode operation far above threshold in broad-area lasers.

Authors:
;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
756066
Report Number(s):
SAND2000-1397J
TRN: AH200021%%395
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Journal of Quantum Electronics
Additional Journal Information:
Other Information: Submitted to Journal of Quantum Electronics; PBD: 1 Jun 2000
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; MATHEMATICAL MODELS; SEMICONDUCTOR LASERS; STARK EFFECT; LASER MIRRORS; OPERATION; RESONATORS; THRESHOLD CURRENT

Citation Formats

CHOW,WENG W., and AMANO,H. Analysis of lateral mode behavior in broad-area InGaN quantum well lasers. United States: N. p., 2000. Web. doi:10.1023/A:1007029605640.
CHOW,WENG W., & AMANO,H. Analysis of lateral mode behavior in broad-area InGaN quantum well lasers. United States. doi:10.1023/A:1007029605640.
CHOW,WENG W., and AMANO,H. Thu . "Analysis of lateral mode behavior in broad-area InGaN quantum well lasers". United States. doi:10.1023/A:1007029605640. https://www.osti.gov/servlets/purl/756066.
@article{osti_756066,
title = {Analysis of lateral mode behavior in broad-area InGaN quantum well lasers},
author = {CHOW,WENG W. and AMANO,H.},
abstractNote = {A wave-optical model that is coupled to a microscopic gain theory is used to investigate lateral mode behavior in group III nitride quantum well lasers. Beam filamentation due to self-focusing in the gain medium is found to limit fundamental-mode output to narrow stripe lasers or to operation close to lasing threshold. Differences between nitride and conventional near-infrared semiconductor lasers arise because of band structure differences, in particular, the presence of a strong quantum-confined Stark effect in the former. Increasing mirror reflectivities in plane-plane resonators to reduce lasing threshold current tends to exacerbate the filamentation problem. On the other hand, a negative-branch unstable resonator is found to mitigate filament effects, enabling fundamental-mode operation far above threshold in broad-area lasers.},
doi = {10.1023/A:1007029605640},
journal = {Journal of Quantum Electronics},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {6}
}