Spatial Mapping of Cadmium Zinc Telluride Materials Properties and Electrical Response to Improve Device yield and Performance
Abstract
Cadmium zinc telluride has experienced tremendous growth in its application to various radiation sensing problems over the last five years. However, there are still issues with yield, particularly of the large volume devices needed for imaging and sensitivity-critical applications. Inhomogeneities of various types and on various length scales currently prevent the fabrication of large devices of high spectral performance. This paper discusses the development of a set of characterization tools for quantifying these inhomogeneities, in order to develop improvement strategies to achieve the desired cadmium zinc telluride crystals for detector fabrication.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- US Department of Energy (US)
- OSTI Identifier:
- 755950
- Report Number(s):
- SAND2000-8613C
TRN: US0005263
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: Conference on Room Temperature Semi Conductor Detectors for Remote Portable and In-Situ Radiation Measurement Systems, Jerusalem (IL), 01/26/1998--01/29/1998; Other Information: PBD: 26 Jan 1998
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CADMIUM TELLURIDES; FABRICATION; PERFORMANCE; ZINC TELLURIDES; ELECTRICAL PROPERTIES; RADIATION DETECTORS
Citation Formats
Van Scyoc, J M, Brunet, B A, Yoon, H, Gilbert, T S, Hilton, N R, Lund, J C, and James, R B. Spatial Mapping of Cadmium Zinc Telluride Materials Properties and Electrical Response to Improve Device yield and Performance. United States: N. p., 1998.
Web.
Van Scyoc, J M, Brunet, B A, Yoon, H, Gilbert, T S, Hilton, N R, Lund, J C, & James, R B. Spatial Mapping of Cadmium Zinc Telluride Materials Properties and Electrical Response to Improve Device yield and Performance. United States.
Van Scyoc, J M, Brunet, B A, Yoon, H, Gilbert, T S, Hilton, N R, Lund, J C, and James, R B. 1998.
"Spatial Mapping of Cadmium Zinc Telluride Materials Properties and Electrical Response to Improve Device yield and Performance". United States.
@article{osti_755950,
title = {Spatial Mapping of Cadmium Zinc Telluride Materials Properties and Electrical Response to Improve Device yield and Performance},
author = {Van Scyoc, J M and Brunet, B A and Yoon, H and Gilbert, T S and Hilton, N R and Lund, J C and James, R B},
abstractNote = {Cadmium zinc telluride has experienced tremendous growth in its application to various radiation sensing problems over the last five years. However, there are still issues with yield, particularly of the large volume devices needed for imaging and sensitivity-critical applications. Inhomogeneities of various types and on various length scales currently prevent the fabrication of large devices of high spectral performance. This paper discusses the development of a set of characterization tools for quantifying these inhomogeneities, in order to develop improvement strategies to achieve the desired cadmium zinc telluride crystals for detector fabrication.},
doi = {},
url = {https://www.osti.gov/biblio/755950},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 26 00:00:00 EST 1998},
month = {Mon Jan 26 00:00:00 EST 1998}
}
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