skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Correlation between nuclear response and defects in CZT

Abstract

Vertical high pressure Bridgman (VHPB) was considered until now to be the most successful crystal growth method to produce Cd{sub 1{minus}x}Zn{sub x}Te (CZT), (0.04 < x < 0.24), for X- and gamma-ray detector crystals. Recently Horizontal Bridgman (HB) Cd{sub 1{minus}x}Zn{sub x}Te crystals produced by IMARAD Co. have also been successfully fabricated into nuclear spectroscopic radiation detectors. In view of the database of many years' study of the electrical properties of VHPB CZT grown and obtained from various sources, the authors also studied the HB CZT crystals in order to compare the defects present in both different kinds of crystals grown by different methods. The VHB-grown samples were examined using thermoelectric emission spectroscopy (TEES), X- and gamma ray spectroscopy and laser induced transient charge technique (TCT). The surface and the bulk crystalline homogeneity were mapped using triaxial double crystal x-ray diffraction (TADXRD) and infrared transmission spectroscopy (IR). They have found a correlation between crystallinity, IR transmission microstructure and trapping times. Spectrometer grade VHPB CZT crystals exhibit trapping times of 20 {micro}s for electrons and 7 {micro}s for holes, however, regions, which were opaque to IR transmission, had trapping times shorter by one order of magnitude. The trapping times of HB CZTmore » for electrons, were 10--15 {micro}s. A similar trend has been observed on VHPB CZT crystals with poor crystallinity. The HB CZT crystals that they measured in this study had a crystallinity that was inferior to that of the best spectroscopic grade VHPB crystals.« less

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
755947
Report Number(s):
SAND2000-8612C
TRN: US0003793
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: International Symposium Optical Science and Technology, Denver, CO (US), 07/19/1999--07/23/1999; Other Information: PBD: 19 Jul 1999
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE; BRIDGMAN METHOD; SEMICONDUCTOR DETECTORS; CADMIUM TELLURIDES; ZINC TELLURIDES; X-RAY SPECTROMETERS; GAMMA SPECTROMETERS; CRYSTAL DEFECTS; TRAPPING; ELECTRICAL PROPERTIES

Citation Formats

Hermon, H, Schieber, M, James, R B, Lee, E, Cross, E, Goorsky, M, Lam, T, Schlesinger, T E, and Greaves, M. Correlation between nuclear response and defects in CZT. United States: N. p., 1999. Web.
Hermon, H, Schieber, M, James, R B, Lee, E, Cross, E, Goorsky, M, Lam, T, Schlesinger, T E, & Greaves, M. Correlation between nuclear response and defects in CZT. United States.
Hermon, H, Schieber, M, James, R B, Lee, E, Cross, E, Goorsky, M, Lam, T, Schlesinger, T E, and Greaves, M. Mon . "Correlation between nuclear response and defects in CZT". United States.
@article{osti_755947,
title = {Correlation between nuclear response and defects in CZT},
author = {Hermon, H and Schieber, M and James, R B and Lee, E and Cross, E and Goorsky, M and Lam, T and Schlesinger, T E and Greaves, M},
abstractNote = {Vertical high pressure Bridgman (VHPB) was considered until now to be the most successful crystal growth method to produce Cd{sub 1{minus}x}Zn{sub x}Te (CZT), (0.04 < x < 0.24), for X- and gamma-ray detector crystals. Recently Horizontal Bridgman (HB) Cd{sub 1{minus}x}Zn{sub x}Te crystals produced by IMARAD Co. have also been successfully fabricated into nuclear spectroscopic radiation detectors. In view of the database of many years' study of the electrical properties of VHPB CZT grown and obtained from various sources, the authors also studied the HB CZT crystals in order to compare the defects present in both different kinds of crystals grown by different methods. The VHB-grown samples were examined using thermoelectric emission spectroscopy (TEES), X- and gamma ray spectroscopy and laser induced transient charge technique (TCT). The surface and the bulk crystalline homogeneity were mapped using triaxial double crystal x-ray diffraction (TADXRD) and infrared transmission spectroscopy (IR). They have found a correlation between crystallinity, IR transmission microstructure and trapping times. Spectrometer grade VHPB CZT crystals exhibit trapping times of 20 {micro}s for electrons and 7 {micro}s for holes, however, regions, which were opaque to IR transmission, had trapping times shorter by one order of magnitude. The trapping times of HB CZT for electrons, were 10--15 {micro}s. A similar trend has been observed on VHPB CZT crystals with poor crystallinity. The HB CZT crystals that they measured in this study had a crystallinity that was inferior to that of the best spectroscopic grade VHPB crystals.},
doi = {},
url = {https://www.osti.gov/biblio/755947}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {7}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: