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Title: Investigations of chemical vapor deposition of GaN using synchrotron radiation

Abstract

The authors apply synchrotron x-ray analysis techniques to probe the surface structure of GaN films during synthesis by metal-organic chemical vapor deposition (MOCVD). Their approach is to observe the evolution of surface structure and morphology in real time using grazing incidence x-ray scattering (GIXS). This technique combines the ability of x-rays to penetrate the chemical vapor deposition environment for in situ measurements, with the sensitivity of GIXS to atomic scale structure. In this paper they present examples from some of their studies of growth modes and surface evolution as a function of process conditions that illustrate the capabilities of synchrotron x-ray analysis during MOCVD growth. They focus on studies of the homoepitaxial growth mode, island coarsening dynamics, and effects of impurities.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab., IL (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
755890
Report Number(s):
ANL/MSD/CP-101980
TRN: AH200021%%96
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Conference
Resource Relation:
Conference: 197th Meeting of the Electrochemical Society, Toronto, Ontario (CA), 05/14/2000--05/19/2000; Other Information: PBD: 25 May 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; SURFACE PROPERTIES; MORPHOLOGY; ON-LINE MEASUREMENT SYSTEMS

Citation Formats

Thompson, C., Stephenson, G. B., Eastman, J. A., Munkholm, A., Auciello, O., Murty, M. V. R., Fini, P., DenBaars, S. P., and Speck, J. S. Investigations of chemical vapor deposition of GaN using synchrotron radiation. United States: N. p., 2000. Web.
Thompson, C., Stephenson, G. B., Eastman, J. A., Munkholm, A., Auciello, O., Murty, M. V. R., Fini, P., DenBaars, S. P., & Speck, J. S. Investigations of chemical vapor deposition of GaN using synchrotron radiation. United States.
Thompson, C., Stephenson, G. B., Eastman, J. A., Munkholm, A., Auciello, O., Murty, M. V. R., Fini, P., DenBaars, S. P., and Speck, J. S. Thu . "Investigations of chemical vapor deposition of GaN using synchrotron radiation". United States. https://www.osti.gov/servlets/purl/755890.
@article{osti_755890,
title = {Investigations of chemical vapor deposition of GaN using synchrotron radiation},
author = {Thompson, C. and Stephenson, G. B. and Eastman, J. A. and Munkholm, A. and Auciello, O. and Murty, M. V. R. and Fini, P. and DenBaars, S. P. and Speck, J. S.},
abstractNote = {The authors apply synchrotron x-ray analysis techniques to probe the surface structure of GaN films during synthesis by metal-organic chemical vapor deposition (MOCVD). Their approach is to observe the evolution of surface structure and morphology in real time using grazing incidence x-ray scattering (GIXS). This technique combines the ability of x-rays to penetrate the chemical vapor deposition environment for in situ measurements, with the sensitivity of GIXS to atomic scale structure. In this paper they present examples from some of their studies of growth modes and surface evolution as a function of process conditions that illustrate the capabilities of synchrotron x-ray analysis during MOCVD growth. They focus on studies of the homoepitaxial growth mode, island coarsening dynamics, and effects of impurities.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}

Conference:
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