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Title: One-sided infrared thermal imaging for flaw characterization of ceramic matrix composites

Abstract

One-sided infrared thermal imaging is being used to characterize voids and delamination in SiC/SiC composites. Flaw depth is estimated by examining the decay of surface temperature after application of a thermal pulse. Digital analysis of the surface temperature/time relationship allows characterization of the sizes and positions of defects. Results show that defects of various sizes and depths can be characterized in SiC/SiC composites with the technique.

Authors:
; ;
Publication Date:
Research Org.:
Argonne National Lab., IL (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
755880
Report Number(s):
ANL/ET/CP-101896
TRN: AH200021%%91
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Conference
Resource Relation:
Conference: 102nd Annual Meeting of the American Ceramic Society, St. Louis, MO (US), 04/30/2000--05/03/2000; Other Information: PBD: 16 May 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON CARBIDES; COMPOSITE MATERIALS; DEFORMATION; DEFECTS; VOIDS; INFRARED THERMOGRAPHY

Citation Formats

Deemer, C., Sun, J. G., and Ellingson, W. A. One-sided infrared thermal imaging for flaw characterization of ceramic matrix composites. United States: N. p., 2000. Web.
Deemer, C., Sun, J. G., & Ellingson, W. A. One-sided infrared thermal imaging for flaw characterization of ceramic matrix composites. United States.
Deemer, C., Sun, J. G., and Ellingson, W. A. Tue . "One-sided infrared thermal imaging for flaw characterization of ceramic matrix composites". United States. https://www.osti.gov/servlets/purl/755880.
@article{osti_755880,
title = {One-sided infrared thermal imaging for flaw characterization of ceramic matrix composites},
author = {Deemer, C. and Sun, J. G. and Ellingson, W. A.},
abstractNote = {One-sided infrared thermal imaging is being used to characterize voids and delamination in SiC/SiC composites. Flaw depth is estimated by examining the decay of surface temperature after application of a thermal pulse. Digital analysis of the surface temperature/time relationship allows characterization of the sizes and positions of defects. Results show that defects of various sizes and depths can be characterized in SiC/SiC composites with the technique.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}

Conference:
Other availability
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