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Title: Thermodynamics of paracrystalline silicon

Abstract

Fluctuation microscopy experiments have shown that the as-deposited structure of amorphous silicon thin films is paracrystalline. A paracrystal consists of small (< 3 nm in diameter) topologically crystalline grains separated by a disordered matrix. Here the authors consider the thermodynamics of paracrystalline silicon as a function of the grain size and the temperature. They offer a simple model that qualitatively explains the observed metastability of the ordered structure at low temperature (300 K), the relaxation towards a more disordered structure at intermediate temperatures (600 K), and the recrystallization at high temperatures (1,000 K).

Authors:
; ;
Publication Date:
Research Org.:
Argonne National Lab., IL (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
755873
Report Number(s):
ANL/MSD/CP-101848
TRN: AH200021%%86
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Conference
Resource Relation:
Conference: 2000 MRS Spring Meeting, San Francisco, CA (US), 04/24/2000--04/28/2000; Other Information: PBD: 9 May 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; AMORPHOUS STATE; MICROSTRUCTURE; GRAIN SIZE; MATHEMATICAL MODELS; ORDER-DISORDER TRANSFORMATIONS; TEMPERATURE DEPENDENCE

Citation Formats

Voyles, P. M., Treacy, M. M. J., and Gibson, J. M. Thermodynamics of paracrystalline silicon. United States: N. p., 2000. Web.
Voyles, P. M., Treacy, M. M. J., & Gibson, J. M. Thermodynamics of paracrystalline silicon. United States.
Voyles, P. M., Treacy, M. M. J., and Gibson, J. M. Tue . "Thermodynamics of paracrystalline silicon". United States. https://www.osti.gov/servlets/purl/755873.
@article{osti_755873,
title = {Thermodynamics of paracrystalline silicon},
author = {Voyles, P. M. and Treacy, M. M. J. and Gibson, J. M.},
abstractNote = {Fluctuation microscopy experiments have shown that the as-deposited structure of amorphous silicon thin films is paracrystalline. A paracrystal consists of small (< 3 nm in diameter) topologically crystalline grains separated by a disordered matrix. Here the authors consider the thermodynamics of paracrystalline silicon as a function of the grain size and the temperature. They offer a simple model that qualitatively explains the observed metastability of the ordered structure at low temperature (300 K), the relaxation towards a more disordered structure at intermediate temperatures (600 K), and the recrystallization at high temperatures (1,000 K).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}

Conference:
Other availability
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