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Title: Defect structure of indium tin oxide and its relationship to conductivity

Abstract

Doping In{sub 2}O{sub 3} with tin results in an improved transparent conducting oxide (TCO). Although indium tin oxide (ITO) is the most frequently used commercial TCO, its defect structure is still uncertain. Previously, its defect chemistry has been inferred based on the conductivity of the material. To directly study the defect structure of ITO, the authors prepared powders under different processing environments and performed neutron powder diffraction. Structural information was obtained by performing Rietveld analysis. The results include positions of the atoms, their thermal displacements, the fractional occupancy of the defect oxygen site, and the fractional occupancies of Sn on each of the two nonequivalent cation sites, showing a strong preference for the b site. These structural results are correlated with the measured electrical properties of the same samples.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab., IL (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
755865
Report Number(s):
ANL/MSD/CP-101832
TRN: AH200021%%82
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Conference
Resource Relation:
Conference: International Conference on Mass and Charge Transport in Inorganic Materials, Techna Publ. SRL, Faenza (IT), 05/28/2000--06/02/2000; Other Information: PBD: 9 May 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; INDIUM OXIDES; TIN OXIDES; CRYSTAL DEFECTS; ELECTRICAL PROPERTIES; SOLAR CELLS

Citation Formats

Gonzalez, G. B., Cohen, J. B., Hwang, J.-H., Mason, T. O., Hodges, J. P., and Jorgensen, J. D. Defect structure of indium tin oxide and its relationship to conductivity. United States: N. p., 2000. Web.
Gonzalez, G. B., Cohen, J. B., Hwang, J.-H., Mason, T. O., Hodges, J. P., & Jorgensen, J. D. Defect structure of indium tin oxide and its relationship to conductivity. United States.
Gonzalez, G. B., Cohen, J. B., Hwang, J.-H., Mason, T. O., Hodges, J. P., and Jorgensen, J. D. Tue . "Defect structure of indium tin oxide and its relationship to conductivity". United States. https://www.osti.gov/servlets/purl/755865.
@article{osti_755865,
title = {Defect structure of indium tin oxide and its relationship to conductivity},
author = {Gonzalez, G. B. and Cohen, J. B. and Hwang, J.-H. and Mason, T. O. and Hodges, J. P. and Jorgensen, J. D.},
abstractNote = {Doping In{sub 2}O{sub 3} with tin results in an improved transparent conducting oxide (TCO). Although indium tin oxide (ITO) is the most frequently used commercial TCO, its defect structure is still uncertain. Previously, its defect chemistry has been inferred based on the conductivity of the material. To directly study the defect structure of ITO, the authors prepared powders under different processing environments and performed neutron powder diffraction. Structural information was obtained by performing Rietveld analysis. The results include positions of the atoms, their thermal displacements, the fractional occupancy of the defect oxygen site, and the fractional occupancies of Sn on each of the two nonequivalent cation sites, showing a strong preference for the b site. These structural results are correlated with the measured electrical properties of the same samples.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}

Conference:
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