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Title: Effective masses for small nitrogen concentrations in InGaAsN alloys on GaAs

Abstract

The variation of the value of the linewidth of an excitonic transition in InGaAsN alloys (1% and 2% nitrogen) as a function of hydrostatic pressure using photoluminescence spectroscopy is studied at 4K. The excitonic linewidth increases as a function of pressure until about 100 kbar after which it tends to saturate. This pressure dependent excitonic linewidth is used to derive the pressure variation of the exciton reduced mass using a theoretical formalism based on the premise that the broadening of the excitonic transition is caused primarily by compositional fluctuations in a completely disordered alloy. The linewidth derived ambient pressure masses are compared and found to be in agreement with other mass measurements. The variation of this derived mass is compared with the results from a nearly first-principles approach in which calculations based on the local density approximation to the Kohn-Sham density functional theory are corrected using a small amount of experimental input.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
755622
Report Number(s):
SAND99-1715C
TRN: AH200021%%361
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: SPIE International Symposium on Optoelectronics '00, San Jose, CA (US), 01/23/2000--01/28/2000; Other Information: PBD: 11 May 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; INDIUM ARSENIDES; GALLIUM ARSENIDES; INDIUM NITRIDES; GALLIUM NITRIDES; EXCITONS; EFFECTIVE MASS; PRESSURE DEPENDENCE; ENERGY GAP; ELECTRONIC STRUCTURE; ALLOY FLUCTUATIONS; CARRIER MASS

Citation Formats

JONES,ERIC D., ALLERMAN,ANDREW A., KURTZ,STEVEN R., FRITZ,IAN J., MODINE,NORMAND A., SIEG,ROBERT M., BAJAJ,K.K., TOZER,S.W., and WEI,X. Effective masses for small nitrogen concentrations in InGaAsN alloys on GaAs. United States: N. p., 2000. Web.
JONES,ERIC D., ALLERMAN,ANDREW A., KURTZ,STEVEN R., FRITZ,IAN J., MODINE,NORMAND A., SIEG,ROBERT M., BAJAJ,K.K., TOZER,S.W., & WEI,X. Effective masses for small nitrogen concentrations in InGaAsN alloys on GaAs. United States.
JONES,ERIC D., ALLERMAN,ANDREW A., KURTZ,STEVEN R., FRITZ,IAN J., MODINE,NORMAND A., SIEG,ROBERT M., BAJAJ,K.K., TOZER,S.W., and WEI,X. Thu . "Effective masses for small nitrogen concentrations in InGaAsN alloys on GaAs". United States. https://www.osti.gov/servlets/purl/755622.
@article{osti_755622,
title = {Effective masses for small nitrogen concentrations in InGaAsN alloys on GaAs},
author = {JONES,ERIC D. and ALLERMAN,ANDREW A. and KURTZ,STEVEN R. and FRITZ,IAN J. and MODINE,NORMAND A. and SIEG,ROBERT M. and BAJAJ,K.K. and TOZER,S.W. and WEI,X.},
abstractNote = {The variation of the value of the linewidth of an excitonic transition in InGaAsN alloys (1% and 2% nitrogen) as a function of hydrostatic pressure using photoluminescence spectroscopy is studied at 4K. The excitonic linewidth increases as a function of pressure until about 100 kbar after which it tends to saturate. This pressure dependent excitonic linewidth is used to derive the pressure variation of the exciton reduced mass using a theoretical formalism based on the premise that the broadening of the excitonic transition is caused primarily by compositional fluctuations in a completely disordered alloy. The linewidth derived ambient pressure masses are compared and found to be in agreement with other mass measurements. The variation of this derived mass is compared with the results from a nearly first-principles approach in which calculations based on the local density approximation to the Kohn-Sham density functional theory are corrected using a small amount of experimental input.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}

Conference:
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