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Title: Retention and switching kinetics of protonated gate field effect transistors

Abstract

The switching and memory retention time has been measured in 50 {micro}m gatelength pseudo-non-volatile memory MOSFETS containing, protonated 40 nm gate oxides. Times of the order of 3.3 seconds are observed for fields of 3 MV cm{sup {minus}1}. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96{percent} after 5,000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide.

Authors:
;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
755619
Report Number(s):
SAND2000-1307J
TRN: AH200020%%50
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Other Information: Submitted to Applied Physics Letters; PBD: 23 May 2000
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; MOSFET; PERFORMANCE TESTING; SWITCHING CIRCUITS; SEMICONDUCTOR STORAGE DEVICES; MEASURING METHODS

Citation Formats

DEVINE,R.A.B., and HERRERA,GILBERT V. Retention and switching kinetics of protonated gate field effect transistors. United States: N. p., 2000. Web. doi:10.1063/1.1311608.
DEVINE,R.A.B., & HERRERA,GILBERT V. Retention and switching kinetics of protonated gate field effect transistors. United States. doi:10.1063/1.1311608.
DEVINE,R.A.B., and HERRERA,GILBERT V. Tue . "Retention and switching kinetics of protonated gate field effect transistors". United States. doi:10.1063/1.1311608. https://www.osti.gov/servlets/purl/755619.
@article{osti_755619,
title = {Retention and switching kinetics of protonated gate field effect transistors},
author = {DEVINE,R.A.B. and HERRERA,GILBERT V.},
abstractNote = {The switching and memory retention time has been measured in 50 {micro}m gatelength pseudo-non-volatile memory MOSFETS containing, protonated 40 nm gate oxides. Times of the order of 3.3 seconds are observed for fields of 3 MV cm{sup {minus}1}. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96{percent} after 5,000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide.},
doi = {10.1063/1.1311608},
journal = {Applied Physics Letters},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}