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Title: In-plane magneto-photoluminescence studies of modulation-doped GaAs/AlGaAs coupled double quantum wells

Abstract

In-plane magnetic field photoluminescence spectra from n series of n-type modulation doped GaAs/Al{sub 0.3}Ga{sub 0.7}As coupled double quantum wells show distinctive doublet structures related to the tunnel-split ground sub-level states. The magnetic field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In a lower mobility sample, the transition energy displays an N-type kink with field (namely a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is attributed to a coupling mechanism due to homogeneous broadening of the electron and hole states. The results are in good agreement with recent theoretical calculations.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
755607
Report Number(s):
SAND2000-1200J
TRN: AH200021%%354
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Other Information: Submitted to Applied Physics Letters; PBD: 11 May 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; PHOTOLUMINESCENCE; HETEROJUNCTIONS; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; MAGNETIC FIELDS; CARRIER MOBILITY; ELECTRICAL PROPERTIES; OPTICAL PROPERTIES; DOPED MATERIALS

Citation Formats

KIM,YONGMIN, PERRY,C.H., SIMMONS,JERRY A., and KLEM,JOHN F. In-plane magneto-photoluminescence studies of modulation-doped GaAs/AlGaAs coupled double quantum wells. United States: N. p., 2000. Web.
KIM,YONGMIN, PERRY,C.H., SIMMONS,JERRY A., & KLEM,JOHN F. In-plane magneto-photoluminescence studies of modulation-doped GaAs/AlGaAs coupled double quantum wells. United States.
KIM,YONGMIN, PERRY,C.H., SIMMONS,JERRY A., and KLEM,JOHN F. Thu . "In-plane magneto-photoluminescence studies of modulation-doped GaAs/AlGaAs coupled double quantum wells". United States. https://www.osti.gov/servlets/purl/755607.
@article{osti_755607,
title = {In-plane magneto-photoluminescence studies of modulation-doped GaAs/AlGaAs coupled double quantum wells},
author = {KIM,YONGMIN and PERRY,C.H. and SIMMONS,JERRY A. and KLEM,JOHN F.},
abstractNote = {In-plane magnetic field photoluminescence spectra from n series of n-type modulation doped GaAs/Al{sub 0.3}Ga{sub 0.7}As coupled double quantum wells show distinctive doublet structures related to the tunnel-split ground sub-level states. The magnetic field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In a lower mobility sample, the transition energy displays an N-type kink with field (namely a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is attributed to a coupling mechanism due to homogeneous broadening of the electron and hole states. The results are in good agreement with recent theoretical calculations.},
doi = {},
journal = {Applied Physics Letters},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}