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Title: Control of the RF waveform at the chuck of an industrial oxide-etch reactor

Abstract

Radio frequency (rf) power is applied to the chuck of a high-density plasma reactor in order to extract ions and to control the energy of the ions used for the fabrication of microelectronic devices. In many cases, the temporal shape of the rf waveform largely determines the shape of the spectrum of those extracted ions, thereby strongly affecting feature evolution. Using auxiliary rf circuits the authors successfully made major changes to the rf potential waveform at the chuck of an Applied Materials 5300 HDP Omega reactor without affecting the normal functioning of the reactor's control systems. This work established the practical feasibility of techniques for modifying the ion energy distribution functions of industrial reactors.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
755601
Report Number(s):
SAND2000-1132J
TRN: AH200021%%47
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Jouranl of Vacuum Science and Technology
Additional Journal Information:
Other Information: Submitted to Journal of Vacuum Science and Technology; PBD: 4 May 2000
Country of Publication:
United States
Language:
English
Subject:
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; 42 ENGINEERING; PLASMA FURNACES; RF SYSTEMS; FREQUENCY CONTROL; WAVE FORMS; MICROELECTRONIC CIRCUITS; FABRICATION; IONIZATION; ENERGY SPECTRA; MODULATION

Citation Formats

BERRY,LEE, MAYNARD,HELEN, MILLER,PAUL A., MOORE,TONY, PENDLEY,MICHAEL, RESTA,VICTORIA, SPARKS,DENNIS, and YANG,QUINGYUN. Control of the RF waveform at the chuck of an industrial oxide-etch reactor. United States: N. p., 2000. Web. doi:10.1116/1.1319819.
BERRY,LEE, MAYNARD,HELEN, MILLER,PAUL A., MOORE,TONY, PENDLEY,MICHAEL, RESTA,VICTORIA, SPARKS,DENNIS, & YANG,QUINGYUN. Control of the RF waveform at the chuck of an industrial oxide-etch reactor. United States. doi:10.1116/1.1319819.
BERRY,LEE, MAYNARD,HELEN, MILLER,PAUL A., MOORE,TONY, PENDLEY,MICHAEL, RESTA,VICTORIA, SPARKS,DENNIS, and YANG,QUINGYUN. Thu . "Control of the RF waveform at the chuck of an industrial oxide-etch reactor". United States. doi:10.1116/1.1319819. https://www.osti.gov/servlets/purl/755601.
@article{osti_755601,
title = {Control of the RF waveform at the chuck of an industrial oxide-etch reactor},
author = {BERRY,LEE and MAYNARD,HELEN and MILLER,PAUL A. and MOORE,TONY and PENDLEY,MICHAEL and RESTA,VICTORIA and SPARKS,DENNIS and YANG,QUINGYUN},
abstractNote = {Radio frequency (rf) power is applied to the chuck of a high-density plasma reactor in order to extract ions and to control the energy of the ions used for the fabrication of microelectronic devices. In many cases, the temporal shape of the rf waveform largely determines the shape of the spectrum of those extracted ions, thereby strongly affecting feature evolution. Using auxiliary rf circuits the authors successfully made major changes to the rf potential waveform at the chuck of an Applied Materials 5300 HDP Omega reactor without affecting the normal functioning of the reactor's control systems. This work established the practical feasibility of techniques for modifying the ion energy distribution functions of industrial reactors.},
doi = {10.1116/1.1319819},
journal = {Jouranl of Vacuum Science and Technology},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}