skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen

Abstract

Electron and hole transport in compensated, InGaAsN ({approx} 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
755593
Report Number(s):
SAND2000-1115J
TRN: AH200021%%351
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Other Information: Submitted to Applied Physics Letters; PBD: 3 May 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; CARRIER MOBILITY; CRYSTAL DEFECTS; HALL EFFECT; PHOTOCONDUCTIVITY; SOLAR CELLS; CRYSTAL DOPING; INDIUM ARSENIDES; GALLIUM ARSENIDES; INDIUM NITRIDES; GALLIUM NITRIDES

Citation Formats

KURTZ,STEVEN R., ALLERMAN,ANDREW A., SEAGER,CARLETON H., SIEG,ROBERT M., and JONES,ERIC D. Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen. United States: N. p., 2000. Web. doi:10.1063/1.126989.
KURTZ,STEVEN R., ALLERMAN,ANDREW A., SEAGER,CARLETON H., SIEG,ROBERT M., & JONES,ERIC D. Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen. United States. doi:10.1063/1.126989.
KURTZ,STEVEN R., ALLERMAN,ANDREW A., SEAGER,CARLETON H., SIEG,ROBERT M., and JONES,ERIC D. Wed . "Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen". United States. doi:10.1063/1.126989. https://www.osti.gov/servlets/purl/755593.
@article{osti_755593,
title = {Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen},
author = {KURTZ,STEVEN R. and ALLERMAN,ANDREW A. and SEAGER,CARLETON H. and SIEG,ROBERT M. and JONES,ERIC D.},
abstractNote = {Electron and hole transport in compensated, InGaAsN ({approx} 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge.},
doi = {10.1063/1.126989},
journal = {Applied Physics Letters},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}