The diffusion bonding of silicon carbide and boron carbide using refractory metals
Joining is an enabling technology for the application of structural ceramics at high temperatures. Metal foil diffusion bonding is a simple process for joining silicon carbide or boron carbide by solid-state, diffusive conversion of the metal foil into carbide and silicide compounds that produce bonding. Metal diffusion bonding trials were performed using thin foils (5 {micro}m to 100 {micro}m) of refractory metals (niobium, titanium, tungsten, and molybdenum) with plates of silicon carbide (both {alpha}-SiC and {beta}-SiC) or boron carbide that were lapped flat prior to bonding. The influence of bonding temperature, bonding pressure, and foil thickness on bond quality was determined from metallographic inspection of the bonds. The microstructure and phases in the joint region of the diffusion bonds were evaluated using SEM, microprobe, and AES analysis. The use of molybdenum foil appeared to result in the highest quality bond of the metal foils evaluated for the diffusion bonding of silicon carbide and boron carbide. Bonding pressure appeared to have little influence on bond quality. The use of a thinner metal foil improved the bond quality. The microstructure of the bond region produced with either the {alpha}-SiC and {beta}-SiC polytypes were similar.
- Research Organization:
- Bettis Atomic Power Lab., West Mifflin, PA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC11-98PN38206
- OSTI ID:
- 755392
- Report Number(s):
- B-T-3255; TRN: US0003438
- Resource Relation:
- Conference: ASM Materials Solution 99: International Conference on Joining of Advanced and Specialty Metals, Cincinnati, OH (US), 11/01/1999; Other Information: PBD: 1 Oct 1999
- Country of Publication:
- United States
- Language:
- English
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