Transition between the 1 x 1 and ({radical}3 x 2{radical}3)R30{degree} surface structures of GaN in the vapor-phase environment
Out-of-plane structures of the GaN(0001) surface in the metal-organic chemical vapor deposition (MOCVD) environment have been determined using in situ grazing-incidence X-ray scattering. The authors measured 11{bar 2}{ell} crystal truncation rod intensities at a variety of temperatures and ammonia partial pressures on both sides of the 1 x 1 to ({radical}3 x 2{radical}3)R30{degree} surface phase transition. The out-of-plane structure of the ({radical}3 x 2{radical}3)R30{degree} phase appears to be nearly independent of temperature below the transition, while the structure of the 1 x 1 phase changes increase rapidly as the phase transition is approached from above. A model for the structure of the 1 x 1 phase with a partially-occupied top Ga layer agrees well with the data. The observed temperature dependence is consistent with a simple model of the equilibrium between the vapor phase and the surface coverage of Ga and N. In addition, the authors present results on the kinetics of reconstruction domain coarsening following a quench into the ({radical}3 x 2{radical}3)R30{degree} phase field.
- Research Organization:
- Argonne National Laboratory, Argonne, IL (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 751874
- Report Number(s):
- ANL/CHM/CP-100849; TRN: AH200018%%116
- Resource Relation:
- Conference: 6th International Conference on surface X-ray and neutron Scattering (6SXNS), Noordwijerkhout (NL), 09/12/1999--09/17/1999; Other Information: PBD: 12 Jan 2000
- Country of Publication:
- United States
- Language:
- English
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