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Title: Atomic-scale identification of Ge/Si intermixing on Si(100) at submonolayer Ge coverages

Abstract

The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions.

Authors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
751231
Report Number(s):
SAND2000-0373J
TRN: AH200019%%44
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Other Information: Submitted to Physical Review Letters; PBD: 8 Feb 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; GERMANIUM; SPATIAL DISTRIBUTION; SCANNING TUNNELING MICROSCOPY; MOLECULAR STRUCTURE

Citation Formats

QIN, X R, SWARTZENTRUBER, BRIAN S, and LAGALLY, M G. Atomic-scale identification of Ge/Si intermixing on Si(100) at submonolayer Ge coverages. United States: N. p., 2000. Web. doi:10.1103/PhysRevLett.84.4645.
QIN, X R, SWARTZENTRUBER, BRIAN S, & LAGALLY, M G. Atomic-scale identification of Ge/Si intermixing on Si(100) at submonolayer Ge coverages. United States. https://doi.org/10.1103/PhysRevLett.84.4645
QIN, X R, SWARTZENTRUBER, BRIAN S, and LAGALLY, M G. 2000. "Atomic-scale identification of Ge/Si intermixing on Si(100) at submonolayer Ge coverages". United States. https://doi.org/10.1103/PhysRevLett.84.4645. https://www.osti.gov/servlets/purl/751231.
@article{osti_751231,
title = {Atomic-scale identification of Ge/Si intermixing on Si(100) at submonolayer Ge coverages},
author = {QIN, X R and SWARTZENTRUBER, BRIAN S and LAGALLY, M G},
abstractNote = {The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions.},
doi = {10.1103/PhysRevLett.84.4645},
url = {https://www.osti.gov/biblio/751231}, journal = {Physical Review Letters},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 08 00:00:00 EST 2000},
month = {Tue Feb 08 00:00:00 EST 2000}
}