Analysis of CZT crystals and detectors grown in Russia and the Ukraine by high-pressure Bridgman methods
Abstract
Sandia National Laboratories (SNL) is leading an effort to evaluate vertical high pressure Bridgman (VHPB) Cd{sub 1-x}Zn{sub x}Te (CZT) crystals grown in the former Soviet Union (FSU) (Ukraine and Russia), in order to study the parameters limiting the crystal quality and the radiation detector performance. The stoichiometry of the CZT crystals, with 0.04 < x < 0.25, has been determined by methods such as proton-induced X-ray emission (PIXE), X-ray diffraction (XRD), microprobe analysis and laser ablation ICP mass spectroscopy (LA-ICP/MS). Other methods such as triaxial double crystal x-ray diffraction (TADXRD), infrared transmission spectroscopy (IR), atomic force microscopy (AFM), thermoelectric emission spectroscopy (TEES) and laser induced transient charge technique (TCT) were also used to evaluate the material properties. The authors have measured the zinc distribution in a CZT ingot along the axial direction and also its homogeneity. The (Cd+Zn)/Te average ratio measured on the Ukraine crystals was 1.2, compared to the ratio of 0.9-1.06 on the Russian ingots. The IR transmission showed highly decorated grain boundaries with precipitates and hollow bubbles. Microprobe elemental analysis and LA-ICP/MS showed carbon precipitates in the CZT bulk and carbon deposits along grain boundaries. The higher concentration of impurities and the imperfect crystallinity lead to shortermore »
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Org.:
- US Department of Energy (US)
- OSTI Identifier:
- 751141
- Report Number(s):
- SAND2000-8525C
TRN: US0003471
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: 1998 Workshop on the Physics and Chemistry of II-VI Semiconductors, Charleston, SC (US), 10/20/1998--10/22/1998; Other Information: PBD: 10 Jan 2000
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; AMBIENT TEMPERATURE; SEMICONDUCTOR DETECTORS; BRIDGMAN METHOD; CADMIUM TELLURIDES; ZINC TELLURIDES; STOICHIOMETRY; MICROSTRUCTURE; ELECTRICAL PROPERTIES
Citation Formats
Hermon, H, Schieber, M, James, R B, Lee, E Y, Yang, N, Antolak, A J, Morse, D H, Hackett, C, Tarver, E, P Kolesnikov, N N, Ivanov, Yu N, Komar, V, Goorsky, M S, and Yoon, H. Analysis of CZT crystals and detectors grown in Russia and the Ukraine by high-pressure Bridgman methods. United States: N. p., 2000.
Web.
Hermon, H, Schieber, M, James, R B, Lee, E Y, Yang, N, Antolak, A J, Morse, D H, Hackett, C, Tarver, E, P Kolesnikov, N N, Ivanov, Yu N, Komar, V, Goorsky, M S, & Yoon, H. Analysis of CZT crystals and detectors grown in Russia and the Ukraine by high-pressure Bridgman methods. United States.
Hermon, H, Schieber, M, James, R B, Lee, E Y, Yang, N, Antolak, A J, Morse, D H, Hackett, C, Tarver, E, P Kolesnikov, N N, Ivanov, Yu N, Komar, V, Goorsky, M S, and Yoon, H. Mon .
"Analysis of CZT crystals and detectors grown in Russia and the Ukraine by high-pressure Bridgman methods". United States. https://www.osti.gov/servlets/purl/751141.
@article{osti_751141,
title = {Analysis of CZT crystals and detectors grown in Russia and the Ukraine by high-pressure Bridgman methods},
author = {Hermon, H and Schieber, M and James, R B and Lee, E Y and Yang, N and Antolak, A J and Morse, D H and Hackett, C and Tarver, E and P Kolesnikov, N N and Ivanov, Yu N and Komar, V and Goorsky, M S and Yoon, H},
abstractNote = {Sandia National Laboratories (SNL) is leading an effort to evaluate vertical high pressure Bridgman (VHPB) Cd{sub 1-x}Zn{sub x}Te (CZT) crystals grown in the former Soviet Union (FSU) (Ukraine and Russia), in order to study the parameters limiting the crystal quality and the radiation detector performance. The stoichiometry of the CZT crystals, with 0.04 < x < 0.25, has been determined by methods such as proton-induced X-ray emission (PIXE), X-ray diffraction (XRD), microprobe analysis and laser ablation ICP mass spectroscopy (LA-ICP/MS). Other methods such as triaxial double crystal x-ray diffraction (TADXRD), infrared transmission spectroscopy (IR), atomic force microscopy (AFM), thermoelectric emission spectroscopy (TEES) and laser induced transient charge technique (TCT) were also used to evaluate the material properties. The authors have measured the zinc distribution in a CZT ingot along the axial direction and also its homogeneity. The (Cd+Zn)/Te average ratio measured on the Ukraine crystals was 1.2, compared to the ratio of 0.9-1.06 on the Russian ingots. The IR transmission showed highly decorated grain boundaries with precipitates and hollow bubbles. Microprobe elemental analysis and LA-ICP/MS showed carbon precipitates in the CZT bulk and carbon deposits along grain boundaries. The higher concentration of impurities and the imperfect crystallinity lead to shorter electron and hole lifetimes in the range of 0.5--2 {micro}s and 0.1 {micro}s respectively, compared to 3--20 {micro}s and 1--7 {micro}s measured on US spectrometer grade CZT detectors. These results are consistent with the lower resistivity and worse crystalline perfection of these crystals, compared to US grown CZT. However, recently grown CZT from FSU exhibited better detector performance and good response to alpha particles.},
doi = {},
url = {https://www.osti.gov/biblio/751141},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}