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Title: 100 kV field emission electron optics for nanolithography

Abstract

A 100 kV optics with field emission source is designed for an electron-beam nanolithography system. A new electrostatic gun lens permits high-voltage operation with low aberrations. A demagnifying double-lens column with fixed magnification and variable aperture is used. The optics are weighted towards 100 kV operation, but the beam voltage can be varied from 25 to 100 kV with resolution maintained below 20 nm. The gun uses a Zr/O/W[l angle]100[r angle] cathode operated near the extended-Schottky emission regime to achieve 1%/h current stability at a fixed extraction voltage. With the source emitting a 0.5 mA/sr angular intensity, 1.5 nA can be focused to 6 and 10 nm with beam voltages of 100 and 50 kV, respectively. A target current density of 2000 A/cm [sup 2] with an effective brightness of 1[times]10[sup 8] A/cm [sup 2] sr enables 2 MHz pixel rate exposures of PMMA at 100 kV with a vector-scan deflection system. 6 refs., 14 figs.

Authors:
 [1]
  1. Etec Systems, Inc., Hayward, CA (United States)
OSTI Identifier:
7369147
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
Additional Journal Information:
Journal Volume: 10:6; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 42 ENGINEERING; OPTICAL SYSTEMS; DESIGN; EVALUATION; SURFACES; ELECTRON BEAM MACHINING; BRIGHTNESS; CURRENT DENSITY; ELECTRON GUNS; FIELD EMISSION; OPTICAL PROPERTIES; PMMA; RESOLUTION; SPECIFICATIONS; SURFACE FINISHING; EMISSION; ESTERS; MACHINING; ORGANIC COMPOUNDS; ORGANIC POLYMERS; PHYSICAL PROPERTIES; POLYACRYLATES; POLYMERS; POLYVINYLS; 440600* - Optical Instrumentation- (1990-); 420200 - Engineering- Facilities, Equipment, & Techniques

Citation Formats

Gesley, M. 100 kV field emission electron optics for nanolithography. United States: N. p., Web. doi:10.1116/1.586039.
Gesley, M. 100 kV field emission electron optics for nanolithography. United States. doi:10.1116/1.586039.
Gesley, M. . "100 kV field emission electron optics for nanolithography". United States. doi:10.1116/1.586039.
@article{osti_7369147,
title = {100 kV field emission electron optics for nanolithography},
author = {Gesley, M},
abstractNote = {A 100 kV optics with field emission source is designed for an electron-beam nanolithography system. A new electrostatic gun lens permits high-voltage operation with low aberrations. A demagnifying double-lens column with fixed magnification and variable aperture is used. The optics are weighted towards 100 kV operation, but the beam voltage can be varied from 25 to 100 kV with resolution maintained below 20 nm. The gun uses a Zr/O/W[l angle]100[r angle] cathode operated near the extended-Schottky emission regime to achieve 1%/h current stability at a fixed extraction voltage. With the source emitting a 0.5 mA/sr angular intensity, 1.5 nA can be focused to 6 and 10 nm with beam voltages of 100 and 50 kV, respectively. A target current density of 2000 A/cm [sup 2] with an effective brightness of 1[times]10[sup 8] A/cm [sup 2] sr enables 2 MHz pixel rate exposures of PMMA at 100 kV with a vector-scan deflection system. 6 refs., 14 figs.},
doi = {10.1116/1.586039},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)},
issn = {0734-211X},
number = ,
volume = 10:6,
place = {United States},
year = {},
month = {}
}