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Title: A metal:[ital p]-[ital n]-CdTe Schottky-barrier solar cell: Photoelectrochemical generation of a shallow [ital p]-type region in [ital n]-CdTe

Abstract

A simple method for producing a Au:[ital p]-[ital n]-CdTe Schottky barrier is described. The shallow [ital p]-[ital n] junction is formed by photoelectrochemical surface oxidization of [ital n]-CdTe. X-ray photoelectron spectroscopy, Auger electron spectroscopy depth profiling, and electron-beam-induced-current measurements provide important insight into the underlying causes of the formation of the [ital p]-type layer. Current-voltage and capacitance-voltage measurements show that the thin [ital p]-layer enhances the effective barrier height relative to that of a traditional Au:[ital n]-CdTe junction. These results account for the Au:[ital p]-[ital n]-CdTe cells exhibiting higher open-circuit photovoltages and higher photoconversion efficiencies than do Au:[ital n]-CdTe Schottky-barrier cells. From temperature dependence studies of the current-voltage characteristics, detailed information on the charge-transport mechanism of the junction was obtained. Photocurrent spectra of Au:[ital p]-[ital n]-CdTe as a function of temperature reveal that exciton excitation in CdTe contributes to the photocurrent.

Authors:
; ; ; ; ;  [1]
  1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
7368971
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics; (United States)
Additional Journal Information:
Journal Volume: 74:4; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CADMIUM TELLURIDE SOLAR CELLS; PHOTOCHEMICAL REACTIONS; AUGER ELECTRON SPECTROSCOPY; GOLD; OXIDATION; P-N JUNCTIONS; PHOTOELECTRON SPECTROSCOPY; PHOTOVOLTAIC EFFECT; SCHOTTKY BARRIER DIODES; TEMPERATURE DEPENDENCE; CHEMICAL REACTIONS; DIRECT ENERGY CONVERTERS; ELECTRON SPECTROSCOPY; ELEMENTS; EQUIPMENT; JUNCTIONS; METALS; PHOTOELECTRIC CELLS; PHOTOELECTROMAGNETIC EFFECTS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; SOLAR EQUIPMENT; SPECTROSCOPY; TRANSITION ELEMENTS; 140505* - Solar Energy Conversion- Photochemical, Photobiological, & Thermochemical Conversion- (1980-); 360606 - Other Materials- Physical Properties- (1992-)

Citation Formats

Pugh, J R, Mao, D, Zhang, J, Heben, M J, Nelson, A J, and Frank, A J. A metal:[ital p]-[ital n]-CdTe Schottky-barrier solar cell: Photoelectrochemical generation of a shallow [ital p]-type region in [ital n]-CdTe. United States: N. p., 1993. Web. doi:10.1063/1.354652.
Pugh, J R, Mao, D, Zhang, J, Heben, M J, Nelson, A J, & Frank, A J. A metal:[ital p]-[ital n]-CdTe Schottky-barrier solar cell: Photoelectrochemical generation of a shallow [ital p]-type region in [ital n]-CdTe. United States. https://doi.org/10.1063/1.354652
Pugh, J R, Mao, D, Zhang, J, Heben, M J, Nelson, A J, and Frank, A J. Sun . "A metal:[ital p]-[ital n]-CdTe Schottky-barrier solar cell: Photoelectrochemical generation of a shallow [ital p]-type region in [ital n]-CdTe". United States. https://doi.org/10.1063/1.354652.
@article{osti_7368971,
title = {A metal:[ital p]-[ital n]-CdTe Schottky-barrier solar cell: Photoelectrochemical generation of a shallow [ital p]-type region in [ital n]-CdTe},
author = {Pugh, J R and Mao, D and Zhang, J and Heben, M J and Nelson, A J and Frank, A J},
abstractNote = {A simple method for producing a Au:[ital p]-[ital n]-CdTe Schottky barrier is described. The shallow [ital p]-[ital n] junction is formed by photoelectrochemical surface oxidization of [ital n]-CdTe. X-ray photoelectron spectroscopy, Auger electron spectroscopy depth profiling, and electron-beam-induced-current measurements provide important insight into the underlying causes of the formation of the [ital p]-type layer. Current-voltage and capacitance-voltage measurements show that the thin [ital p]-layer enhances the effective barrier height relative to that of a traditional Au:[ital n]-CdTe junction. These results account for the Au:[ital p]-[ital n]-CdTe cells exhibiting higher open-circuit photovoltages and higher photoconversion efficiencies than do Au:[ital n]-CdTe Schottky-barrier cells. From temperature dependence studies of the current-voltage characteristics, detailed information on the charge-transport mechanism of the junction was obtained. Photocurrent spectra of Au:[ital p]-[ital n]-CdTe as a function of temperature reveal that exciton excitation in CdTe contributes to the photocurrent.},
doi = {10.1063/1.354652},
url = {https://www.osti.gov/biblio/7368971}, journal = {Journal of Applied Physics; (United States)},
issn = {0021-8979},
number = ,
volume = 74:4,
place = {United States},
year = {1993},
month = {8}
}