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Title: Sizing single crystal sapphire

Abstract

Although there are several significant advantages to using single crystal sapphire as substrate material for hybrid microcircuits, the sizing of this material can be far more troublesome than the sizing of alternate material, such as polycrystal alumina. The work done in developing a satisfactory method of sizing single crystal sapphire is described. The results of sizing using grinding wheels, wire saws, and laser scribers are given. It was concluded that laser scribing is a viable method of sizing if the sapphire is grown parallel to the r plane. This takes advantage of the easy crystal cleavage planes and reduces the risk of edge chipping and nonperpendicular breaking.

Authors:
Publication Date:
Research Org.:
Sandia Labs., Albuquerque, N.Mex. (USA)
OSTI Identifier:
7357417
Report Number(s):
SAND-75-0614
DOE Contract Number:
AT(29-1)-789
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SAPPHIRE; MACHINING; ELECTRONIC CIRCUITS; GRINDING MACHINES; LASERS; MATERIALS WORKING; MONOCRYSTALS; SUBSTRATES; WIRES; ALUMINIUM COMPOUNDS; ALUMINIUM OXIDES; CHALCOGENIDES; CORUNDUM; CRYSTALS; FABRICATION; MACHINE TOOLS; MINERALS; OXIDES; OXYGEN COMPOUNDS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats

Bushmire, D.W.. Sizing single crystal sapphire. United States: N. p., 1976. Web. doi:10.2172/7357417.
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Bushmire, D.W.. Sizing single crystal sapphire. United States. doi:10.2172/7357417.
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Bushmire, D.W.. Mon . "Sizing single crystal sapphire". United States. doi:10.2172/7357417. https://www.osti.gov/servlets/purl/7357417.
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@article{osti_7357417,
title = {Sizing single crystal sapphire},
author = {Bushmire, D.W.},
abstractNote = {Although there are several significant advantages to using single crystal sapphire as substrate material for hybrid microcircuits, the sizing of this material can be far more troublesome than the sizing of alternate material, such as polycrystal alumina. The work done in developing a satisfactory method of sizing single crystal sapphire is described. The results of sizing using grinding wheels, wire saws, and laser scribers are given. It was concluded that laser scribing is a viable method of sizing if the sapphire is grown parallel to the r plane. This takes advantage of the easy crystal cleavage planes and reduces the risk of edge chipping and nonperpendicular breaking.},
doi = {10.2172/7357417},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Mar 01 00:00:00 EST 1976},
month = {Mon Mar 01 00:00:00 EST 1976}
}
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DOI:  10.2172/7357417
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