Optically pumped GaAs-Ga/sub x/Al/sub x/As half-ring laser fabricated by liquid-phase epitaxy over chemically etched channels

Journal Article · Fri Oct 15 00:00:00 EDT 1976 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89138· OSTI ID:7356686

Botez, D; Figueroa, L; Wang, S

Half-ring waveguides (5 ..mu..m width, 185 ..mu..m radius) fabricated by liquid-phase expitaxial growth of Ga/sub x/Al/sub x/As and GaAs layers over preferentially etched channels in GaAs substrates were made to lase by optical pumping with a N/sub 2/ laser (lambda=3371 A) at 77 degreeK. The half-ring lasers had a threshold of about 2 x 10/sup 4/ W/cm/sup 2/; a bending loss per radian ..cap alpha../sub c/<1.5 cm/sup -1/; strong TE polarization; and a well-defined circumferential mode structure: ..delta..lambdaapprox. =1.07 A at lambda=8280 A for a 580-..mu..m-long cavity. Straight guides of similar profile to the circular guides were made to lase for comparison. A calculated 0.5-A mode broadening due to transient heating during the pump laser pulse accounts for the observed lasing spectra. (AIP)

• Research Organization: Department of Electrical Engineering and Computer Sciences, and the Electronics Research Laboratory, University of California, Berkeley, California 94720
• OSTI ID: 7356686
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 29:8
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
OPERATION
ALUMINIUM ARSENIDES
EMISSION SPECTRA
ENERGY LOSSES
EPITAXY
ETCHING
FABRICATION
GALLIUM ARSENIDES
OPTICAL PUMPING
THRESHOLD ENERGY
WAVEGUIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ENERGY
GALLIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SPECTRA
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)