Investigation of SOS processes for fabrication of radiation-hardened MIS devices and integrated circuits. Final report, 1 May 1974--31 May 1975

Technical Report · Thu May 01 00:00:00 EDT 1975

OSTI ID:7355141

Williams, R A; Pancholy, R K; Nichols, D K

The program has the objectives of obtaining a better understanding of the radiation-induced n-channel SOS leakage problem and of examining the effects of processing variations on the radiation-induced leakage. Experiments were performed on devices from 6 processing lots--encompassing variations in silicon doping densities and techniques, device design, and device geometry. Experiments on devices having the sapphire thinned to approximately 3 mils and with a gate electrode on the sapphire demonstrated that the radiation-electrode n-channel leakage is due to inversion of the p-type silicon at the sapphire interface by positive charge trapped in the sapphire. This charge was found to saturate at a value of approximately 3 x 10 to the 11th power charges/sq cm, under conditions of +10 V drain bias during irradiation.

• Research Organization: Rockwell International Corp., Anaheim, Calif. (USA). Electronics Research Div.
• DOE Contract Number: F19628-74-C-0199
• OSTI ID: 7355141
• Report Number(s): AD-A-015751; C-74-829/501
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
INTEGRATED CIRCUITS
RADIATION HARDENING
MIS TRANSISTORS
FABRICATION
LEAKAGE CURRENT
CURRENTS
ELECTRIC CURRENTS
ELECTRONIC CIRCUITS
HARDENING
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
420800 - Engineering- Electronic Circuits & Devices- (-1989)