Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures

Journal Article · Wed Jan 01 00:00:00 EST 1975 · CRC Crit. Rev. Solid State Sci.; (United States)

DOI:https://doi.org/10.1080/10408437508243487· OSTI ID:7351243

Robinson, G Y; Fertig, D J

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

• Research Organization: Univ. of Minnesota, Minneapolis
• OSTI ID: 7351243
• Journal Information: CRC Crit. Rev. Solid State Sci.; (United States), Vol. 5:3
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
AUGER ELECTRON SPECTROSCOPY
USES
SEMICONDUCTOR DEVICES
CRYSTAL GROWTH
ETCHING
FILMS
GALLIUM ARSENIDES
KINETICS
MONOCRYSTALS
PALLADIUM SILICIDES
PHASE STUDIES
SILICON
SPUTTERING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTALS
ELECTRON SPECTROSCOPY
ELEMENTS
GALLIUM COMPOUNDS
PALLADIUM COMPOUNDS
PNICTIDES
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
SPECTROSCOPY
SURFACE FINISHING
TRANSITION ELEMENT COMPOUNDS
400103* - Radiometric & Radiochemical Procedures- (-1987)