skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Growth of GaAs, Ga/sub x/In/sub 1-x/Sb and Ga/sub x/Al/sub 1-x/As by the travelling heater method

Abstract

Gallium arsenide crystals 1 cm in diameter and several cm long were grown by the traveling heater method (THM) in (111), (111), (110) and (211) directions, with the best results obtained with the two (111) orientations. A solvent zone slightly shorter than the heater produced a convex interface, which aided grain selection and dislocation elimination. Characterization by mass spectrometry and Hall measurements showed that THM crystals were superior to the feed material from which they were grown. Some crystals were doped with Te, Zn, or Cr. Polycrystalline ingots of Ga/sub x/In/sub 1-x/ Sb and Ga/sub x/ Al/sub 1-x/ As were also prepared by THM and their composition profiles measured. Constitutional supercooling was not a problem.

Authors:
 [1];
  1. Univ. of Southern California, Los Angeles
Publication Date:
OSTI Identifier:
7340770
Resource Type:
Journal Article
Journal Name:
Mater. Res. Bull.; (United States)
Additional Journal Information:
Journal Volume: 11:8
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; CRYSTAL GROWTH; ANTIMONY ALLOYS; GALLIUM ALLOYS; INDIUM ALLOYS; ALUMINIUM ARSENIDES; ALUMINIUM ADDITIONS; CRYSTAL DOPING; HALL EFFECT; HEATING; MASS SPECTROSCOPY; ORIENTATION; TELLURIUM ADDITIONS; ZINC ADDITIONS; ALLOYS; ALUMINIUM ALLOYS; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; PNICTIDES; SPECTROSCOPY; TELLURIUM ALLOYS; ZINC ALLOYS; 360601* - Other Materials- Preparation & Manufacture; 360101 - Metals & Alloys- Preparation & Fabrication

Citation Formats

Yip, V F.S., and Wilcox, W R. Growth of GaAs, Ga/sub x/In/sub 1-x/Sb and Ga/sub x/Al/sub 1-x/As by the travelling heater method. United States: N. p., 1976. Web. doi:10.1016/0025-5408(76)90161-6.
Yip, V F.S., & Wilcox, W R. Growth of GaAs, Ga/sub x/In/sub 1-x/Sb and Ga/sub x/Al/sub 1-x/As by the travelling heater method. United States. https://doi.org/10.1016/0025-5408(76)90161-6
Yip, V F.S., and Wilcox, W R. Sun . "Growth of GaAs, Ga/sub x/In/sub 1-x/Sb and Ga/sub x/Al/sub 1-x/As by the travelling heater method". United States. https://doi.org/10.1016/0025-5408(76)90161-6.
@article{osti_7340770,
title = {Growth of GaAs, Ga/sub x/In/sub 1-x/Sb and Ga/sub x/Al/sub 1-x/As by the travelling heater method},
author = {Yip, V F.S. and Wilcox, W R},
abstractNote = {Gallium arsenide crystals 1 cm in diameter and several cm long were grown by the traveling heater method (THM) in (111), (111), (110) and (211) directions, with the best results obtained with the two (111) orientations. A solvent zone slightly shorter than the heater produced a convex interface, which aided grain selection and dislocation elimination. Characterization by mass spectrometry and Hall measurements showed that THM crystals were superior to the feed material from which they were grown. Some crystals were doped with Te, Zn, or Cr. Polycrystalline ingots of Ga/sub x/In/sub 1-x/ Sb and Ga/sub x/ Al/sub 1-x/ As were also prepared by THM and their composition profiles measured. Constitutional supercooling was not a problem.},
doi = {10.1016/0025-5408(76)90161-6},
url = {https://www.osti.gov/biblio/7340770}, journal = {Mater. Res. Bull.; (United States)},
number = ,
volume = 11:8,
place = {United States},
year = {1976},
month = {8}
}