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Title: Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors

Abstract

Experiments were performed in an attempt to make thin n/sup +/ contacts on high-purity germanium by the solid phase/sup 1)/ epitaxial regrowth of arsenic doped amorphous germanium. After cleaning the crystal surface with argon sputtering and trying many combinations of layers, it was not found possible to induce recrystallization below 400/sup 0/C. However, it was found that simple thermally evaporated amorphous Ge made fairly good electron or hole blocking contacts. Excellent spectrometers have been made with amorphous Ge replacing the n/sup +/ contact. As presently produced, the amorphous Ge contact diodes show a large variation in high-voltage leakage current.

Authors:
;
Publication Date:
Research Org.:
California Univ., Berkeley (USA). Lawrence Berkeley Lab.
OSTI Identifier:
7330740
Report Number(s):
LBL-5564; CONF-761006-33
TRN: 77-006425
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Conference
Resource Relation:
Conference: Nuclear science, scintillation and semiconductor counter symposium, New Orleans, LA, USA, 20 Oct 1976
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; GERMANIUM; CRYSTALLIZATION; ELECTRIC CONTACTS; HIGH-PURITY GE DETECTORS; AMORPHOUS STATE; ELECTRONS; EPITAXY; EVAPORATION; HOLES; N-TYPE CONDUCTORS; SEMICONDUCTOR DIODES; SOLIDS; SURFACES; ELECTRICAL EQUIPMENT; ELEMENTARY PARTICLES; ELEMENTS; EQUIPMENT; FERMIONS; GE SEMICONDUCTOR DETECTORS; LEPTONS; MEASURING INSTRUMENTS; METALS; PHASE TRANSFORMATIONS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; 360401* - Polymers & Plastics- Preparation & Fabrication- (-1987); 440101 - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments

Citation Formats

Hansen, W L, and Haller, E E. Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors. United States: N. p., 1976. Web.
Hansen, W L, & Haller, E E. Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors. United States.
Hansen, W L, and Haller, E E. 1976. "Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors". United States. https://www.osti.gov/servlets/purl/7330740.
@article{osti_7330740,
title = {Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors},
author = {Hansen, W L and Haller, E E},
abstractNote = {Experiments were performed in an attempt to make thin n/sup +/ contacts on high-purity germanium by the solid phase/sup 1)/ epitaxial regrowth of arsenic doped amorphous germanium. After cleaning the crystal surface with argon sputtering and trying many combinations of layers, it was not found possible to induce recrystallization below 400/sup 0/C. However, it was found that simple thermally evaporated amorphous Ge made fairly good electron or hole blocking contacts. Excellent spectrometers have been made with amorphous Ge replacing the n/sup +/ contact. As presently produced, the amorphous Ge contact diodes show a large variation in high-voltage leakage current.},
doi = {},
url = {https://www.osti.gov/biblio/7330740}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Oct 01 00:00:00 EDT 1976},
month = {Fri Oct 01 00:00:00 EDT 1976}
}

Conference:
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