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Title: Ballistic electron emission microscopy, current transport, and p-type. delta. doping control on n-isotype InAs-GaAs heterojunctions

Abstract

Ballistic electron emission microscopy (BEEM) and the conventional I-V technique have been applied to study the band discontinuity at a relaxed InAs-GaAs heterojunction grown by molecular-beam epitaxy (MBE). A conduction band discontinuity {Delta}E{sub c} of 0.72 eV has been determined from the measurements and from appropriate numerical modeling of the interface. The lateral variation of the conduction band discontinuity has been successfully probed with BEEM with a view of establishing the influence of misfit dislocations on the barrier height. Experiments are also reported where the conduction band offset has been significantly modified by appropriate {delta} doping close to the interface. Doping with Be has enabled values of the effective barrier as high as 1.2 eV to be obtained. These investigations are also well described by numerical modeling.

Authors:
; ; ; ; ; ;  [1]
  1. Univ. of Wales, Cardiff (United Kingdom)
OSTI Identifier:
7306161
Report Number(s):
CONF-910115-
Journal ID: ISSN 0734-211X; CODEN: JVTBD
Resource Type:
Conference
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
Additional Journal Information:
Journal Volume: 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; CRYSTAL DOPING; ELECTRON MICROSCOPY; INDIUM ARSENIDES; BERYLLIUM; CRYSTAL STRUCTURE; DOPED MATERIALS; ELECTRON EMISSION; GRADED BAND GAPS; INTERFACES; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; N-TYPE CONDUCTORS; P-N JUNCTIONS; P-TYPE CONDUCTORS; SCHOTTKY EFFECT; ALKALINE EARTH METALS; ARSENIC COMPOUNDS; ARSENIDES; ELEMENTS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; JUNCTIONS; MATERIALS; METALS; MICROSCOPY; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Shen, T H, Elliott, M, Fowell, A E, Cafolla, A, Richardson, B E, Westwood, D, and Williams, R H. Ballistic electron emission microscopy, current transport, and p-type. delta. doping control on n-isotype InAs-GaAs heterojunctions. United States: N. p., Web.
Shen, T H, Elliott, M, Fowell, A E, Cafolla, A, Richardson, B E, Westwood, D, & Williams, R H. Ballistic electron emission microscopy, current transport, and p-type. delta. doping control on n-isotype InAs-GaAs heterojunctions. United States.
Shen, T H, Elliott, M, Fowell, A E, Cafolla, A, Richardson, B E, Westwood, D, and Williams, R H. . "Ballistic electron emission microscopy, current transport, and p-type. delta. doping control on n-isotype InAs-GaAs heterojunctions". United States.
@article{osti_7306161,
title = {Ballistic electron emission microscopy, current transport, and p-type. delta. doping control on n-isotype InAs-GaAs heterojunctions},
author = {Shen, T H and Elliott, M and Fowell, A E and Cafolla, A and Richardson, B E and Westwood, D and Williams, R H},
abstractNote = {Ballistic electron emission microscopy (BEEM) and the conventional I-V technique have been applied to study the band discontinuity at a relaxed InAs-GaAs heterojunction grown by molecular-beam epitaxy (MBE). A conduction band discontinuity {Delta}E{sub c} of 0.72 eV has been determined from the measurements and from appropriate numerical modeling of the interface. The lateral variation of the conduction band discontinuity has been successfully probed with BEEM with a view of establishing the influence of misfit dislocations on the barrier height. Experiments are also reported where the conduction band offset has been significantly modified by appropriate {delta} doping close to the interface. Doping with Be has enabled values of the effective barrier as high as 1.2 eV to be obtained. These investigations are also well described by numerical modeling.},
doi = {},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)},
issn = {0734-211X},
number = ,
volume = 9:4,
place = {United States},
year = {},
month = {}
}

Conference:
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